Thermoelectric technology has emerged as a prominent area of research in the past few decades for harnessing waste heat and improving the efficiency of next-generation renewable energy technologies. There has been rapid progress in the development of high-performance thermoelectric materials, as measured by the dimensionless figure of merit (ZT = S² · σ · κ⁻¹). Several heavy-metal-based thermoelectric materials with commercial-level performance (ZT = 1) have so far been proposed. However, the extensive application of these materials still faces challenges due to their low thermal/chemical stability, high toxicity, and limited abundance in the Earth’s crust. In contrast, oxide-based thermoelectric materials, such as ZnO, SrTiO₃, layered cobalt oxides, etc., have attracted growing interest as they can overcome the limitations of their heavy-metal-based counterparts. In this review, we summarize the recent research progress and introduce improvement strategies in oxide-based thermoelectric materials. This will provide an overview of their development history and design schemes, ultimately aiding in enhancing the overall performance of oxide-based thermoelectric materials.

Thermal transistors that electrically control heat flow have attracted growing attention as thermal management devices and phonon logic circuits. Although several thermal transistors are demonstrated, the use of liquid electrolytes may limit the application from the viewpoint of reliability or liquid leakage. Herein, a solid‐state thermal transistor that can electrochemically control the heat flow with an on‐to‐off ratio of the thermal conductivity (κ) of ≈4 without using any liquid is demonstrated. The thermal transistor is a multilayer film composed of an upper electrode, strontium cobaltite (SrCoO_x), solid electrolyte, and bottom electrode. An electrochemical redox treatment at 280 °C in air repeatedly modulates the crystal structure and κ of the SrCoO_x layer. The fully oxidized perovskite‐structured SrCoO₃ layer shows a high κ ≈3 .8 W m⁻¹ K⁻¹, whereas the fully reduced defect perovskite‐structured SrCoO₂ layer shows a low κ ≈ 0.95 W m⁻¹ K⁻¹. The present solid‐state electrochemical thermal transistor may become next‐generation devices toward future thermal management technology.

Oxygen vacancy engineered SrTiO ₃ exerts an efficient and stable H ₂ O ₂ production by the thermoelectrocatalytic (TECatal) effect under temperature gradients.