The shortage of ${}^3$He, a crucial element widely used as a neutron converter in neutron detection applications, has sparked significant research efforts aimed at finding alternative materials, developing appropriate deposition methods, and exploring new detector architectures. This issue has required the exploration of novel approaches to address the challenges faced in neutron detection. Among the available conversion materials, ${}^{10}$B has emerged as one of the most promising choices due to its high neutron-capture cross-section and relatively high Q value. In our previous papers, we delved into the possibility of depositing neutron conversion layers based on ${}^{10}$B using Pulsed Laser Deposition (PLD). We investigated and evaluated the performance of these layers based on various factors, including deposition conditions, substrate properties, and film thickness. Moreover, we successfully developed and tested a device that employed a single conversion layer coupled with a silicon particle detector. In this current study, we present the development of a new device that showcases improved performance in terms of efficiency, sensitivity, and discrimination against $\gamma$ background signals. The background signals can arise from the environment or be associated with the neutron field. To achieve these advancements, we considered a new detection geometry that incorporates the simultaneous use of two ${}^{10}$B conversion layers, each with a thickness of 1.5 $\mathsf{\mu }$m, along with two solid-state silicon detectors. The primary objective of this design was to enhance the overall detection efficiency when compared to the single-layer geometry. By employing this novel setup, our results demonstrate a significant enhancement in the device’s performance when exposed to a neutron flux from an Am-Be neutron source, emitting a flux of approximately 2.2 × 10${}^6$ neutrons per second. Furthermore, we established a noteworthy agreement between the experimental data obtained and the simulation results.

Among all the inorganic perovskites, cesium lead bromide (CsPbBr${}_3$) has gained significant interest due to its stability and remarkable optoelectronic/photoluminescence properties. Because of the influence of deposition techniques, the experimental conditions that play a key role in each need to be addressed. In this context, we present CsPbBr${}_3$ films grown by pulsed laser deposition (PLD) and discuss the impact of oxygen stemming from their growth under a reduced vacuum, i.e., as the background atmosphere, rather than from post-growth exposure. In detail, stoichiometric mechano-chemically synthesized targets were prepared for deposition by nanosecond-PLD ($\lambda$ = 248 nm, $\tau$ = 20 ns, room temperature, fluence of 1 J/cm${}^2$) to produce slightly Br-deficient CsPbBr${}_3$ films under different background pressure conditions (P${}_0$ = 10${}^{-4}$, 10${}^{-2}$ Pa). The characterization results suggest that the presence of oxygen during the deposition of CsPbBr${}_3$ can advantageously passivate bromide-vacancy states in all the film thicknesses and reduce losses from emissions. Overall, our findings shed light on the critical role of oxygen, under conditions in which we ruled out other effects related to air exposure, and provide valuable guidelines for potential applications in various optoelectronic devices.