The power gain and output power of millimeter-wave (mm-Wave) and terahertz (THz) amplifiers are critical performance metrics, particularly when the operating frequencies of amplifiers are near to the maximum oscillator frequency ($f_{max}$) of the transistor. This paper presents the design of a 110 GHz amplifier based on the quasi-linear method. The power gain can be boosted to maximum achievable gain ($G_{max}$) using a linear, lossless, reciprocal feedback network, though this leads to a simultaneous decrease in output power. Based on quasi-linear analysis, for an amplifier with $G_{max}$ gain, when the K-factor is equal to 1, the output power is zero. To avoid the very low output power of amplifiers, a new approach is proposed to balance power gain and output power. A 110 GHz six-stage feedback amplifier was designed using the proposed approach and fabricated using 40 nm CMOS technology. The measured power gain is 26.5 dB, and the saturation output power is 13 dBm at 110 GHz.