The targeted design of lanthanide-based emitters for solution-processed organic light-emitting diodes (OLEDs) resulted in obtaining an NIR OLED with one of the highest efficiencies among ytterbium-based solution-processed OLEDs (30 μW W⁻¹). The design was aimed at the combination of high luminescence efficiency with solubility and charge carrier mobility. The latter was achieved thanks to the introduction of the purposefully selected neutral ligands, which combine electron mobility and the ability to sensitize lanthanide luminescence. Besides, the HOMO and LUMO energies and charge carrier mobility of solution-processed thin films of coordination compounds were measured experimentally for the first time, and novel highly luminescent europium-based materials with PLQYs of up to 80% and purely NIR luminescent ytterbium complexes were obtained.

Thin films of p‐ and n‐type organic semiconductors for thermoelectrical (TE) applications are produced by doping of tetrathiotetracene (TTT). To obtain p‐type material TTT is doped with iodine during vacuum deposition of thin films or by postdeposition doping using controlled exposure to iodine vapors. Thermal codeposition in vacuum of TTT and tetracyanoquinodimethane (TCNQ) is used to prepare n‐type thin films. The attained thin films are characterized by measurements of the Seebeck coefficient and electrical conductivity. The Seebeck coefficient and conductivity can be varied by altering the doping level. p‐type TTT:iodide thin films with a power factor of 0.52 μW m⁻¹ K⁻², an electrical conductivity of 130 S m⁻¹, and a Seebeck coefficient of 63 μV K⁻¹ and n‐type TCNQ:TTT films with a power factor of 0.33 μW m⁻¹ K⁻², an electrical conductivity of 57 S m⁻¹, and a Seebeck coefficient of −75 μV K⁻¹ are produced. Engineered deposition of both p‐ and n‐type thermoelectric conducting elements on the same substrate is demonstrated. A proof of concept prototype of planar thin film TE generator based on a single p–n couple from the organic materials is built and its power generation is characterized.

Second order non linear optical (NLO) properties of sPMMA based host-guest systems containing eight dimethylaminobenzylidene -1, 3 - indandione (DMABI) related chromophores have been investigated by means of quantum chemical calculations and SHG experimental characterization. Ab initio calculations with basis set 6-31G were used for molecular geometry determination as well as in the calculations of molecular hyperpolarizability by FF approach. Influence of the chromophore concentration on the host-guest film NLO performance was obtained by SHG Maker fringe experiments. The highest value of d⁵³²₃₃ =80 pm/V (frequency corrected value d⁰₃₃ =12 pm/V) at chromophore concentration 15 %wt have been recorded for tret-butyl substituted DMABI chromophore.