Monolayer graphene (1LG) is frequently unpredictably modified by supporting material so that it limits development of devices. Van der Waals interaction is dominant in the models describing the in-plane processes, including the electrical charge transport. However, the current flow perpendicular to the plane of the graphene is still less understood. This report analysed specific aspect of the perpendicular current and disclosed an original way to create transport bridges perpendicular to the plane across the 1LG. The most extraordinary finding is that the electron transport between two parallel metal surfaces can be shut down and opened if the metals are separated by the 1LG. The electron transmission can be intentionally varied in this metal–1LG–metal (M–G–M) system by pressure. In the experimental study the AFM force curve and tunnelling current measurements were combined when the external load force (0–1200 nN) and electrical potential (−1.5 V to +1.5 V) were used. It is proved that for low voltages (<±9 mV) a bridge is opened perpendicular to the graphene across the M–G–M systems by the external force, if the compression dependent Fermi level crosses electronic states in the interfaces and graphene. The localised bridges with diameter about 10–40 nm can be opened and kept continuously by the stabilised force in separated points of the system. However, the predictable changes can be produced in the system if the voltage and the force exceeded critical magnitudes. A combined model was proposed acceptable to explain the bridging and predictably modify the characteristics.

Metal–graphene–metal (M–G–M) stacks have provided new specific methods for the integration of two-dimensional (2D) materials into three-dimensional (3D) electronic devices, such as transistors, supercapacitors, memristors and others. Intentional control of the local electronic properties in the stacks is the primary problem to be solved when developing hybrid structures with 2D and 3D elements. In order to do this, the physical mechanisms and processes that define the properties of the stacks must be thoroughly understood. This report introduces an approach based on the force curve analysis in terms of the interface characteristics in the M–G–M stack. In the study, the stack was produced by pressing the platinum probe of a scanning probe microscope into the surface of a gold-supported graphene monolayer, and the force curve was measured under applied direct current voltage. Based on the model of the van der Waals contact, the equilibrium interface distances and the built-in potential were obtained from the experimental results. The equilibrium state was proved to be weakly dependent on the applied voltage below a threshold level. Above this level, irreversible changes and the effect of the history of the tests were detected. The proposed method is acceptable to quantitatively describe the most essential characteristics in a local area of the M–G–M stack, essential for the construction of nano-scaled electronic devices.

While charge transport in the horizontal plane of graphene has been widely studied, there is only limited understanding about the transport across a stack of films that include graphene sheets. In this report, a model of a metal–graphene–metal stack was produced and investigated via detailed analysis of experimental dependences of electrical current on applied external voltage. Scanning probe microscopy (SPM) was used to measure the dependences of the local tunneling current on the voltage under fixed compressing force. The SPM platinum probe produced the compressing force on gold-supported graphene in the metal–graphene–metal system. The experimental results were explained by a model that included the pinning of the Fermi level of graphene to platinum and the related changes in the parameters of the potential barrier for the electron flow. It was demonstrated that low-voltage and high-voltage intervals can be identified in the charge transport across the metal–graphene–metal stack. In the high-voltage interval (approximately > |±0.7| V in the tested stack), the history of the current measurement was detected due to the charge accumulation. In the low-voltage interval, the current was determined by the electronic states near the Fermi level. In this interval, the graphene layer can function as a blocking gate for the electron transport in the metal–graphene–metal system.

Tellurium (Te) has recently gained attention due to its unique one-dimensional helical chain crystal structure and promising optoelectronic and thermoelectric properties. In this study, we investigate the influence of substrate temperature (296 K–326 K) on the structural and electrical characteristics of ∼20 nm Te films deposited via vacuum thermal evaporation on Si/SiO _₂ substrates. Morphological analysis using atomic force microscopy and high-resolution transmission electron microscopy revealed correlation between the substrate temperature and the changes in the structure from trapezoidal to elongated stick-like features. X-ray diffraction and Raman spectroscopy demonstrated that the Te chains were predominantly oriented parallel to the substrate surface at T _S = 326 K. The chain length and packing density were dependent on T _S . Spatially resolved current-voltage measurements show a strong temperature-dependent decrease of the in-plane charge transport, whereas higher-temperature films were characterized by an increased lateral resistance. Scanning Kelvin probe microscopy measurements further reveal surface potential differences of ∼0.6 V between samples. These results demonstrate that small variations in substrate temperature can significantly modulate nanoscale morphology and electrical transport, providing a route to engineer Te-based thin-film devices with tailored performance.