Graphene has shown great potential for ultra-high frequency electronics. However, using graphene in electronic devices creates a requirement for electrodes with low contact resistance. Thermal annealing is sometimes used to improve the performance of contact electrodes. However, high-temperature annealing may introduce additional doping or defects to graphene. Moreover, an extensive increase in temperature may damage electrodes by destroying the metal–graphene contact. In this work, we studied the effect of high-temperature annealing on graphene and nickel–graphene contacts. Annealing was done in the temperature range of 200–800 °C and the effect of the annealing temperature was observed by two and four-point probe resistance measurements and by Raman spectroscopy. We observed that the annealing of a graphene sample above 300 °C increased the level of doping, but did not always improve electrical contacts. Above 600 °C, the nickel–graphene contact started to degrade, while graphene survived even higher process temperatures.

Graphene research and technology development requires to reveal adsorption processes and understand how the defects change the physicochemical properties of the graphene-based systems. In this study, shell-isolated nanoparticle-enhanced Raman spectroscopy (SHINERS) and graphene-enhanced Raman spectroscopy (GERS) coupled with density functional theory (DFT) modeling were applied for probing the structure of riboflavin adsorbed on single-layer graphene substrate grown on copper. Intense and detailed vibrational signatures of the adsorbed riboflavin were revealed by SHINERS method. Based on DFT modeling and detected downshift of prominent riboflavin band at 1349 cm⁻¹ comparing with the solution Raman spectrum, π-stacking interaction between the adsorbate and graphene was confirmed. Different spectral patterns from graphene-riboflavin surface were revealed by SHINERS and GERS techniques. Contrary to GERS method, SHINERS spectra revealed not only ring stretching bands but also vibrational features associated with ribityl group of riboflavin and D-band of graphene. Based on DFT modeling it was suggested that activation of D-band took place due to riboflavin induced tilt and distortion of graphene plane. The ability to explore local perturbations by the SHINERS method was highlighted. We demonstrated that SHINERS spectroscopy has a great potential to probe adsorbed molecules at graphene.

Monolayer graphene (1LG) is frequently unpredictably modified by supporting material so that it limits development of devices. Van der Waals interaction is dominant in the models describing the in-plane processes, including the electrical charge transport. However, the current flow perpendicular to the plane of the graphene is still less understood. This report analysed specific aspect of the perpendicular current and disclosed an original way to create transport bridges perpendicular to the plane across the 1LG. The most extraordinary finding is that the electron transport between two parallel metal surfaces can be shut down and opened if the metals are separated by the 1LG. The electron transmission can be intentionally varied in this metal–1LG–metal (M–G–M) system by pressure. In the experimental study the AFM force curve and tunnelling current measurements were combined when the external load force (0–1200 nN) and electrical potential (−1.5 V to +1.5 V) were used. It is proved that for low voltages (<±9 mV) a bridge is opened perpendicular to the graphene across the M–G–M systems by the external force, if the compression dependent Fermi level crosses electronic states in the interfaces and graphene. The localised bridges with diameter about 10–40 nm can be opened and kept continuously by the stabilised force in separated points of the system. However, the predictable changes can be produced in the system if the voltage and the force exceeded critical magnitudes. A combined model was proposed acceptable to explain the bridging and predictably modify the characteristics.

The ability to directly deposit graphene layers on diverse substrates (including the ones with existing functioning electronic devices) is a very attractive method for integrating two-dimensional materials into electronic systems based on typical semiconductors. However, the task is highly challenging due to the high temperatures required for synthesis of the graphene structures. Plasma-enhanced chemical vapor deposition is an option that can be used to produce large-area graphene layers at sufficiently low temperatures. A lack of deep understanding of the plasma-associated processes limits the ability to directly control graphene growth. In this study, we experimentally investigated how the density of the ionized species flow influences the growth of the nanostructured graphene layers using a custom process chamber layout. The relationship between the growth of the nanostructured carbon-based films and the flow of the ionized species of the working gas mixture was quantitatively characterized for a set of specific parameters. We also analyzed the influence of deposition time and substrate temperature on the growth of the films and discuss the driving mechanisms. Three unique stages were identified in the self-arrangement of the layer. The activation energy of the process was ∼0.31 eV.

Metal–graphene–metal (M–G–M) stacks have provided new specific methods for the integration of two-dimensional (2D) materials into three-dimensional (3D) electronic devices, such as transistors, supercapacitors, memristors and others. Intentional control of the local electronic properties in the stacks is the primary problem to be solved when developing hybrid structures with 2D and 3D elements. In order to do this, the physical mechanisms and processes that define the properties of the stacks must be thoroughly understood. This report introduces an approach based on the force curve analysis in terms of the interface characteristics in the M–G–M stack. In the study, the stack was produced by pressing the platinum probe of a scanning probe microscope into the surface of a gold-supported graphene monolayer, and the force curve was measured under applied direct current voltage. Based on the model of the van der Waals contact, the equilibrium interface distances and the built-in potential were obtained from the experimental results. The equilibrium state was proved to be weakly dependent on the applied voltage below a threshold level. Above this level, irreversible changes and the effect of the history of the tests were detected. The proposed method is acceptable to quantitatively describe the most essential characteristics in a local area of the M–G–M stack, essential for the construction of nano-scaled electronic devices.

While charge transport in the horizontal plane of graphene has been widely studied, there is only limited understanding about the transport across a stack of films that include graphene sheets. In this report, a model of a metal–graphene–metal stack was produced and investigated via detailed analysis of experimental dependences of electrical current on applied external voltage. Scanning probe microscopy (SPM) was used to measure the dependences of the local tunneling current on the voltage under fixed compressing force. The SPM platinum probe produced the compressing force on gold-supported graphene in the metal–graphene–metal system. The experimental results were explained by a model that included the pinning of the Fermi level of graphene to platinum and the related changes in the parameters of the potential barrier for the electron flow. It was demonstrated that low-voltage and high-voltage intervals can be identified in the charge transport across the metal–graphene–metal stack. In the high-voltage interval (approximately > |±0.7| V in the tested stack), the history of the current measurement was detected due to the charge accumulation. In the low-voltage interval, the current was determined by the electronic states near the Fermi level. In this interval, the graphene layer can function as a blocking gate for the electron transport in the metal–graphene–metal system.