The interaction between ${\mathrm{C}}_{60}$ and the Pt(111) surface has been studied by high-resolution electron-energy-loss spectroscopy, photoemission and Auger spectroscopy, and low-energy electron diffraction from 100 to 1150 K. ${\mathrm{C}}_{60}$ forms strong covalent bonds with Pt with very small charge transfer (<0.8 electrons/molecule from ${\mathrm{C}}_{60}$ to the substrate), has a low surface mobility, and decomposes at about 1050 K, leaving a multidomain graphitic surface layer. ${\mathrm{C}}_{60}$ decomposes also on Ni(110) at about 760 K, forming a carbidic carbon layer, which transforms into graphitic carbon at higher temperatures. Both surfaces act as a catalyst for the fragmentation process. © 1996 The American Physical Society.

In this paper, we report the effect of 1.5 MeV proton beam irradiation dose on the structural and electrical properties of TiO₂ thin films deposited on n–Si substrates. The formation and transformation of different TiO₂ phases in the irradiated thin films were characterized by X-ray diffraction and X-ray photoelectron spectroscopy (XPS). X-ray diffraction measurements revealed that the as grown film was rich in Ti₅O₉ phase and then converted to mixed phases of TiO₂ (rutile and anatase) after exposure with radiation doses up to 5 × 10¹⁴ cm⁻². The XPS results revealed the formation of oxygen vacancy (negative) traps in the exposed TiO₂ films, which showed strong dependence on the dose. The C-V measurements showed that proton radiations also damaged the Si substrate and created deep level defects in the substrate, which caused a shift of 0.26 ± 0.01 V in the flat band voltage (V_FB). I–V measurements showed that the ideality factor increased and the rectification ratio dropped with the increase in the radiation dose. The present study showed the stability of TiO₂/Si interface and TiO₂ film as an oxide layer against proton radiations.