The excitonic insulator (EI) is a Bose-Einstein condensation (BEC) of excitons bound by electron-hole interaction in a solid, which could support high-temperature BEC transition. The material realization of EI has been challenged by the difficulty of distinguishing it from a conventional charge density wave (CDW) state. In the BEC limit, the preformed exciton gas phase is a hallmark to distinguish EI from conventional CDW, yet direct experimental evidence has been lacking. Here we report a distinct correlated phase beyond the 2×2 CDW ground state emerging in monolayer 1T-ZrTe₂ and its investigation by angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). The results show novel band- and energy-dependent folding behavior in a two-step process, which is the signatures of an exciton gas phase prior to its condensation into the final CDW state. Our findings provide a versatile two-dimensional platform that allows tuning of the excitonic effect.

Charge density wave (CDW is one of the most ubiquitous electronic orders in quantum materials. While the essential ingredients of CDW order have been extensively studied, a comprehensive microscopic understanding is yet to be reached. Recent research efforts on the CDW phenomena in two-dimensional (2D) materials provide a new pathway toward a deeper understanding of its complexity. This review provides an overview of the CDW orders in 2D with atomically thin transition metal dichalcogenides (TMDCs) as the materials platform. We mainly focus on the electronic structure investigations on the epitaxially grown TMDC samples with angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy as complementary experimental tools. We discuss the possible origins of the 2D CDW, novel quantum states coexisting with them, and exotic types of charge orders that can only be realized in the 2D limit.

Recently, Bi ₂ O ₂ Se was revealed as a promising two-dimensional (2D) semiconductor for next generation electronics, due to its moderate bandgap size, high electron mobility and pronounced ambient stability. Meanwhile, it has been predicted that high-quality Bi ₂ O ₂ Se-related heterostructures may possess exotic physical phenomena, such as piezoelectricity and topological superconductivity. Herein, we report the first successful heteroepitaxial growth of Bi ₂ O ₂ Se films on SrTiO ₃ substrates via pulsed laser deposition (PLD) method. Films obtained under optimal conditions show an epitaxial growth with the c axis perpendicular to the film surface and the a and b axes parallel to the substrate. The growth mode transition to three-dimensional (3D) island from quasi-2D layer of the heteroepitaxial Bi ₂ O ₂ Se films on SrTiO ₃ (001) substrates is observed as prolonging deposition time of films. The maximum value of electron mobility reaches 160 cm ² V ⁻¹ s ⁻¹ at room temperature in a 70 nm thick film. The thickness dependent mobility provides evidence that interface-scattering is likely to be the limiting factor for the relatively low electron mobility at low temperature, implying that the interface engineering as an effective method to tune the low temperature electron mobility. Our work suggests the epitaxial Bi ₂ O ₂ Se films grown by PLD are promising for both fundamental study and practical applications.

Although the 1T ^′ phase is rare in the transition metal dichalcogenides (TMDCs) family, it has attracted rapid growing research interest due to the coexistence of superconductivity, unsaturated magneto-resistance, topological phases etc. Among them, the quantum spin Hall (QSH) state in monolayer 1T ^′ -TMDCs is especially interesting because of its unique van der Waals crystal structure, bringing advantages in the fundamental research and application. For example, the van der Waals two-dimensional (2D) layer is vital in building novel functional vertical heterostructure. The monolayer 1T ^′ -TMDCs has become one of the widely studied QSH insulator. In this review, we review the recent progress in fabrications of monolayer 1T ^′ -TMDCs and evidence that establishes it as QSH insulator.