梦露 Research and Fabrication of 1 310 nm Superluminescent Diodes with High 吕

Ms. 梦露 Research and Fabrication of 1 310 nm Superluminescent Diodes with High 吕


Research Focus & Metrics

Academic Career Length

4Years (2023-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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28 September 2023 in Nanomaterials
Verified
Journal Article
Open access
PDF file
HCHuiyuan Chu
Huiyuan Chu
HWHongpei Wang
Hongpei Wang
YHYancheng Huang
Yancheng Huang
DDdaihao hao dai
daihao hao dai
梦吕梦露 Research and Fabrication of 1 310 nm Superluminescent Diodes with High 吕
梦露 Research and Fabrication of 1 310 nm Superluminescent Diodes with High 吕
CJCheng Jiang
Cheng Jiang
The Au ion implantation process has emerged as an effective and simple method to be utilized for the fabrication of opto-electronic materials and devices due to numerous fascinating features of Au nanoparticles such as surface plasmon resonance (SPR), large third-order nonlinearity and a fast response time. In this paper, we describe the fabrication of a novel Au nanoparticle saturable absorber (Au NP-SA) by embedding the Au NPs into a SiO2 thin film using the ion implantation process, which shows excellent saturable absorption features due to the localized surface plasmon resonance (LSPR) effect of Au NPs. A stable and high-quality pulsed laser with a repetition rate of 33.3 kHz and a single pulse energy of 11.7 nJ was successfully constructed with the Au NP-SA. Both the stable operation characteristic of the obtained Q-switched pulsed laser and the high repeatability of the fabrication process of the Au NP-SA were demonstrated. In addition, the simple feasibility and maturity of the ion implantation process allow for the plasmonic nanoparticles to be easily integrated into other types of opto-electronic materials and devices to further improve their performance, and shows immense potential for the production of wafer-level products.