Semiconductor superluminescent light-emitting diodes (SLEDs) have emerged as ideal and vital broadband light sources with extensive applications, such as optical fiber-based sensors, biomedical sensing/imaging, wavelength-division multiplexing system testing and optoelectronic systems, etc. Self-assembled quantum dots (SAQDs) are very promising candidates for the realization of broadband SLED due to their intrinsic large inhomogeneous spectral broadening. Introducing excited states (ESs) emission could further increase the spectral bandwidth. However, almost all QD-based SLEDs are limited to the ground state (GS) or GS and first excited state (ES₁) emission. In this work, multiple five-QD-layer structures with large dot size inhomogeneous distribution were grown by optimizing the molecular beam epitaxy (MBE) growth conditions. Based on that, with the assistance of a carefully designed mirror-coating process to accurately control the cavity mirror loss of GS and ESs, respectively, a broadband QD-SLED with three simultaneous states of GS, ES₁ and second excited-state (ES₂) emission has been realized, exhibiting a large spectral width of 91 nm with a small spectral dip of 1.3 dB and a high continuous wave (CW) output power of 40 mW. These results pave the way for a new fabrication technique for high-performance QD-based low-coherent light sources.

Owing to its broadband absorption, ultrafast recovery time, and excellent saturable absorption feature, graphene has been recognized as one of the best candidates as a high-performance saturable absorber (SA). However, the low absorption efficiency and reduced modulation depth severely limit the application of graphene-based SA in ultrafast fiber lasers. In this paper, a single-layer graphene saturable absorber mirror (SG-SAM) was coated by a quarter-wave SiO₂ passivated layer, and a significantly enhanced modulation depth and reduced saturation intensity were obtained simultaneously compared to the SG-SAM without the SiO₂ coating layer. In addition, long-term operational stability was found in the device due to the excellent isolation and protection of the graphene absorption layer from the external environment by the SiO₂ layer. The high performance of the SAM was further confirmed by the construction of a ring-cavity EDF laser generating mode-locked pulses with a central wavelength of 1563.7 nm, a repetition rate of 34.17 MHz, and a pulse width of 830 fs.

The Au ion implantation process has emerged as an effective and simple method to be utilized for the fabrication of opto-electronic materials and devices due to numerous fascinating features of Au nanoparticles such as surface plasmon resonance (SPR), large third-order nonlinearity and a fast response time. In this paper, we describe the fabrication of a novel Au nanoparticle saturable absorber (Au NP-SA) by embedding the Au NPs into a SiO₂ thin film using the ion implantation process, which shows excellent saturable absorption features due to the localized surface plasmon resonance (LSPR) effect of Au NPs. A stable and high-quality pulsed laser with a repetition rate of 33.3 kHz and a single pulse energy of 11.7 nJ was successfully constructed with the Au NP-SA. Both the stable operation characteristic of the obtained Q-switched pulsed laser and the high repeatability of the fabrication process of the Au NP-SA were demonstrated. In addition, the simple feasibility and maturity of the ion implantation process allow for the plasmonic nanoparticles to be easily integrated into other types of opto-electronic materials and devices to further improve their performance, and shows immense potential for the production of wafer-level products.

Polystyrene (PS) possesses numerous remarkable properties like high transparency, impressive mechanical strength, and a large specific surface area, making it an excellent mask plate or template for the preparation of anti-opal structures. Moreover, it should be noted that PS also exhibits exceptional nonlinear properties due to the subwavelength periodic configuration. In this paper, a self-assembled PS microsphere photonic crystal saturable absorber (PSM-SA) has been proposed and fabricated. It exhibits impressive properties including high stability, high damage threshold, high refractive index, and large specific surface area. It is suggested that the periodic structure of PS in the film has a significant impact on the photonic band gap, resulting in excellent adjustable optical nonlinear characteristics. By integrating PSM-SA into a self-built ring fiber laser system, a Q-switched laser with a pulse width of approximately 2 μs and a repetition rate of 40 kHz at a wavelength of 1562 nm is obtained. These findings demonstrate its potential for enabling efficient and adjustable nonlinear optical functionalities in various optical devices, contributing to the expanding realm of PS microsphere photonic crystals and their significant impact on advancing nonlinear optics technology.