This paper proposes the use of environmentally friendly alternatives, C₆F₆ and C₄H₂F₆, as perfluorocarbon (PFC) and hydrofluorocarbon (HFC) precursors, respectively, for SiO₂ plasma etching, instead of conventional precursors C₄F₈ and CHF₃. The study employs scanning electron microscopy for etch profile analysis and quadrupole mass spectrometry for plasma diagnosis. Ion bombardment energy at the etching conditions is determined through self-bias voltage measurements, while densities of radical species are obtained using quadrupole mass spectroscopy. The obtained results compare the etch performance, including etch rate and selectivity, between C₄F₈ and C₆F₆, as well as between CHF₃ and C₄H₂F₆. Furthermore, greenhouse gas (GHG) emissions are evaluated using a million metric ton of carbon dioxide equivalent, indicating significantly lower emissions when replacing conventional precursors with the proposed alternatives. The results suggest that a significant GHG emissions reduction can be achieved from the investigated alternatives without a deterioration in SiO₂ etching characteristics. This research contributes to the development of alternative precursors for reducing global warming impacts.

One of the cleaning processes in semiconductor fabrication is the ashing process using oxygen plasma, which has been normally used N₂ gas as additive gas to increase the ashing rate, and it is known that the ashing rate is strongly related to the concentration of oxygen radicals measured OES. However, by performing a comprehensive experiment of the O₂ plasma ashing process in various N₂/O₂ mixing ratios and RF powers, our investigation revealed that the tendency of the density measured using only OES did not exactly match the ashing rate. This problematic issue can be solved by considering the plasma parameter, such as electron density. This study can suggest a method inferring the exact maximum condition of the ashing rate based on the plasma diagnostics such as OES, Langmuir probe, and cutoff probe, which might be useful for the next-generation plasma process.

Hydroxyl radicals (OH) play a crucial role in plasma-bio applications. As pulsed plasma operation is preferred, and even expanded to the nanosecond range, it is essential to study the relationship between OH radical production and pulse characteristics. In this study, we use optical emission spectroscopy to investigate OH radical production with nanosecond pulse characteristics. The experimental results reveal that longer pulses generate more OH radicals. To confirm the effect of pulse properties on OH radical generation, we conduct computational chemical simulations, focusing on two types of pulse properties: pulse instant power and pulse width. The simulation results show that, similar to the experimental results, longer pulses generate more OH radicals. In the nanosecond range, reaction time is critical for OH radical generation. In terms of chemical aspects, N₂ metastable species mainly contribute to OH radical generation. It is a unique behavior observed in nanosecond range pulsed operation. Furthermore, humidity can turn over the tendency of OH radical production in nanosecond pulses. In a humid condition, shorter pulses are advantageous for generating OH radicals. Electrons play key roles in this condition and high instant power contributes to them.

Reducing greenhouse gas emissions from semiconductor manufacturing has been attracting enormous interest in both industry and academia as global warming issues have increased in significance year by year. Among various strategies, the search for etch precursors that have low global warming potential is actively underway worldwide to reduce the use of conventional precursors with high global warming potential. In this paper, we explore the use of C6F6, a promising candidate to replace the widely utilized perfluorocarbon precursor C4F8, for plasma atomic layer etching (ALE) of SiO2. In situ ellipsometry results indicated that acceptable ALE characteristics were obtained with C4F8 and C6F6 each in their own specific ALE window, while C6F6 showed superior ALE performance. Investigation into the ALE performance with different precursors was then conducted based on plasma diagnostics for radical density, electron density, and plasma potential, and the results of which showed that the difference in the radical composition between precursors significantly affected the resulting ALE trends and also that the excellent ALE performance with C6F6 might originate from its significant polymeric characteristics. We expect the present findings to contribute to the wider adoption of low global warming potential precursors in the etching process.

In this study, the problems encountered in radar cross-section (RCS) measurement experiments utilizing a dielectric barrier discharge (DBD) plasma system are examined and an effective solution is proposed. A DBD plasma system generates heat due to the high bias voltage required for plasma generation. The thermal-induced structural deformation of the DBD structure caused by this high voltage and its impact on RCS measurements are analyzed. In addition, techniques for minimizing the thermal-induced deformation and compensation methods for addressing the minimized deformation are proposed. Furthermore, RCS measurements are conducted on two kinds of DBD structures using the proposed method to experimentally demonstrate the improved agreement between the simulation and measurement results. For both structures, the RCS experimental results are in very good agreement with the simulation results, which enables accurate plasma characterization. In conclusion, it can be expected that the proposed method can be used to provide more accurate RCS measurements on various DBD structures that generate high heat.

This paper deals with the practical application of Radar Cross Section (RCS) reduction technology using plasma. Although various plasma application technologies for RCS reduction have been studied, there are still many issues to be addressed for practical implementation. In order to achieve actual application, the discharge should be sustained regardless of the external environment of the aircraft. It is also important to investigate the actual plasma parameters to determine the expected RCS reduction effect. Building upon previous studies that optimized the electrodes for RCS reduction, this study fabricates a Dielectric Barrier Discharge (DBD) source suitable for dynamic environments and verifies the power consumption during one cycle of plasma generation. The obtained results are expected to contribute to the optimization of DBD electrodes for plasma RCS reduction.