Since the first isolation of graphene over a decade ago, research into graphene has exponentially increased due to its excellent electrical, optical, mechanical and chemical properties. Graphene has been shown to enhance the performance of various electronic devices. In addition, graphene can be simply produced through chemical vapor deposition (CVD). Although the synthesis of graphene has been widely researched, especially for CVD growth method, the lack of understanding on various synthetic parameters still limits the fabrication of large-area and defect-free graphene films. This report critically reviews various parameters affecting the quality of CVD-grown graphene to understand the relationship between these parameters and the choice of metal substrates and to provide a point of reference for future studies of large-area, CVD-grown graphene.

The complicated chemical vapour deposition (CVD) is currently the most viable method of producing graphene. Most studies have extensively focused on chemical aspects either through experiments or computational studies. However, gas-phase dynamics in CVD reportedly plays an important role in improving graphene quality. Given that mass transport is the rate-limiting step for graphene deposition in atmospheric-pressure CVD (APCVD), the interfacial phenomena at the gas–solid interface (i.e., the boundary layer) are a crucial controlling factor. Accordingly, only by understanding and controlling the boundary-layer thickness can uniform full-coverage graphene deposition be achieved. In this study, a simplified computational fluid dynamics analysis of APCVD was performed to investigate gas-phase dynamics during deposition. Boundary-layer thickness was also estimated through the development of a customised homogeneous gas model. Interfacial phenomena, particularly the boundary layer and mass transport within it, were studied. The effects of Reynolds number on these factors were explored and compared with experimentally obtained results of the characterised graphene deposit. We then discussed and elucidated the important relation of fluid dynamics to graphene growth through APCVD.

DRAM has been approaching its maximum physical limit due to the demand of smaller size and higher capacity memory resistor. The researchers have discovered the abilities of a memristor, a Non Volatile Memory (NVM) that could overcome the size and capacity obstacles. This paper discussed about the deposition of zinc oxide (ZnO) on indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrate by electrodeposition. Metallic Zn film was deposited on substrates with varying deposition time from 15 to 120 seconds in very dilute zinc chloride (ZnCl 2) aqueous and subsequently oxidized at 150 o C to form ZnO/ITO coated PET junction. The deposited thin film was characterized via x-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The results from I-V measurement show the deposited ZnO exhibits pinched hysteresis loop. The hysteresis loop becomes smaller with increasing deposition time. The 15 seconds electrodeposition gave the largest hysteresis loop and largest value of resistive switching ratio of 1.067. The result of the synthesized ZnO on the flexible substrate can be one of the alternatives to replace the current memory system as the flexible memory system.

Growth kinetics of few-layer graphene grown by flame deposition correlates to BIN20J species in a methane to soot mechanism model.