Multi-wavelength distributed feedback laser array based tunable semiconductor lasers have been widely used owing to their high mode stability and simple tuning scheme. Comparing with the in-parallel laser array, the in-series one can avoid a large power loss caused by the optical combiner. However, the single-mode stability of an in-series laser array is vulnerable to the reflections of other lasers. Here we experimentally demonstrated a tunable in-series laser array with high single-mode stability and high uniformity of wavelength spacing. To reduce the impact of such reflections, the Bragg gratings in different lasers were designed in phase, and the grating phase error was reduced by utilizing the reconstruction-equivalent-chirp technique. Besides, a three-section laser structure was applied in each laser to increase the priority of the dominant lasing mode. Four lasers with small wavelength-spacings of 2.5 nm were integrated in the in-series laser array. According to the measurement results of 40 in-series laser arrays (160 lasers), wavelength deviations of 90.6% lasers were within ±0.2 nm, average wavelength spacings of 97.5% of the measured laser arrays were deviated from the design within ±0.2 nm, and SMSRs of 96.3% lasers were above 45 dB. The output power was above 25 mW and the relative intensity noise was below -130 dB/Hz. Like the in-parallel laser array, the proposed laser array can be applied in either continuous wavelength tuning or fast channel switching. For the continuous wavelength tuning applications, the 10-nm tuning range was obtained with a temperature tuning range of less than 20 °C. For the fast channel switching applications, 4 channels with 2.5-nm spacing are available, and the switching time between two channels was less than 300 ns.

Photonic generation of linearly chirped microwave waveforms (LCMWs) using a monolithic integrated three-section laser is experimentally demonstrated in this work. All three sections of the laser cavity, including the front DFB section, phase section and rear DFB section, have the same active layer, which can avoid the butt-joint re-growth process. The gratings in both DFB sections are fabricated by the Reconstruction Equivalent Chirp technique, which can significantly decrease the difficulties in realizing precise grating structure. By adjusting the integrated three-section semiconductor laser to work in the period-one (P1) state and applying a sweeping signal to the front DFB section, the beating signal, i.e., an LCMW with a large time bandwidth product (TBWP), can be generated. In the current proof-of-concept experiment, an LCMW with a large TBWP up to 5.159 × 10⁵ is generated, of which the bandwidth and the duration time are 6.7 GHz and 77 us respectively. The compressed pulse width is 150 ps. In addition, by adjusting the bias currents of the rear DFB section and front DFB section as well as the amplitude of the sweeping signals, LCMWs with tunable center frequency and tunable bandwidth can be achieved.

A novel approach to realizing an optoelectronic oscillator (OEO) based on an integrated multi-section (IMS) distributed feedback (DFB) laser is proposed and experimentally demonstrated. Our scheme adopts the method of direct modulation and a built-in microwave photonic filter (MPF), making the structure simpler and more flexible than an external modulator and electrical bandpass filter (EBPF). The IMS-DFB laser, which can overcome the drawbacks of using discrete lasers, is the key device in the scheme. Further, the two DFB sections, which are fabricated by Reconstruction Equivalent Chirp (REC) technique, are injected mutually. The SSB phase noise of the generated signal at the frequency of 20.3 GHz is −115.3 dBc/Hz@10kHz and −92.9 dBc/Hz@1kHz. The sidemode suppression ratio (SMSR) is 60.94 dB, which is a 40 dB improvement over a single loop. Furthermore, we demonstrate that the phase noise improves about 8 dB at the frequency offset of 1 kHz, when employing 13 km and 5.4 km fibers as the dual loop. The simple and compact structure, which consists of an IMS-DFB laser with high wavelength controlling accuracy and low process requirement, is a promising development for OEO integration.

A monolithic integrated dual-wavelength DFB semiconductor laser is fabricated and experimentally demonstrated. Utilizing the reconstruction-equivalent chirp (REC) technique, dual-wavelength lasing is obtained by introducing two symmetric equivalent phase shifts in a chirped sampled Bragg grating. The laser operates at 1650 nm and the wavelength spacing is about 0.8 nm at room temperature. The frequency of the beat signal between the two wavelengths is 88.47 GHz, and the linewidth of the beat signal is 5.1 MHz. Based on the REC technique, the grating pattern can be fabricated by using holographic exposure combining with conventional lithography. This work provides a simple and cost-effective way to achieve dual-wavelength semiconductor laser.

A distributed feedback (DFB) laser for high-speed modulation with asymmetric corrugation-pitch-modulated (ACPM) grating structure and high-reflection and anti-reflection coating (HR-AR) coating is demonstrated theoretically and experimentally in this paper. The ACPM gating structure is fabricated by the reconstruction equivalent chirp (REC) technology, which is with low cost. The impact of the longitudinal spatial hole burning (LSHB) effect and the facet phase on the characteristics of the ACPM DFB laser is discussed in detail. The numerical simulation results show that the proposed ACPM DFB laser can suppress the LSHB effect significantly. Comparing with the conventional HR-AR DFB laser, the ACPM DFB laser can achieve higher output efficiency, better single-mode yield, and wider modulation bandwidth. The modulation eye diagrams of HR-AR DFB lasers with different grating structures are also presented. The experimental results show that the LSHB effect in the HR-AR DFB laser with ACPM structure is suppressed effectively. The laser with ACPM structure fabricated by the REC technique has high slope efficiency, stable single longitudinal mode operation, and wide modulation bandwidth.

A monolithically integrated two-section laser is presented for wideband and frequency-tunable photonic microwave generation. The laser consists of two back-to-back DFB sections forming a mutually coupled structure. By properly adjusting the bias currents of two sections, the laser can stably work at the state of period-one oscillation over a wide range of frequency detuning. Based on this, continuous and linear tuning of photonic microwave signals can be achieved. Experimental results confirm that a large tunable range from 12.45 to 80.30 GHz can be realized using this laser.