In this study, n-type MoS₂ monolayer flakes are grown through chemical vapor deposition (CVD), and a p-type Cu₂O thin film is grown via electrochemical deposition. The crystal structure of the grown MoS₂ flakes is analyzed through transmission electron microscopy. The monolayer structure of the MoS₂ flakes is verified with Raman spectroscopy, multiphoton excitation microscopy, atomic force microscopy, and photoluminescence (PL) measurements. After the preliminary processing of the grown MoS₂ flakes, the sample is then transferred onto a Cu₂O thin film to complete a p-n heterogeneous structure. Data are confirmed via scanning electron microscopy, SHG, and Raman mapping measurements. The luminous energy gap between the two materials is examined through PL measurements. Results reveal that the thickness of the single-layer MoS₂ film is 0.7 nm. PL mapping shows a micro signal generated at the 627 nm wavelength, which belongs to the B2 excitons of MoS₂ and tends to increase gradually when it approaches 670 nm. Finally, the biosensor is used to detect lung cancer cell types in hydroplegia significantly reducing the current busy procedures and longer waiting time for detection. The results suggest that the fabricated sensor is highly sensitive to the change in the photocurrent with the number of each cell, the linear regression of the three cell types is as high as 99%. By measuring the slope of the photocurrent, we can identify the type of cells and the number of cells.

Optical measurements of temperature-dependent photoluminescence (PL) spectral peak, integrated PL intensity and PL decay time, and microstructure analyses with high-resolution transmission electron microscopy showed the strong dependencies of thermal annealing effects on quantum well (QW) width in InGaN/GaN QW structures. With different QW widths, different levels of strain energy were built. Upon thermal annealing, energy relaxation resulted in the reshaping of quantum dots and hence the changes of optical properties. Thermal annealing at 800 °C of a narrow QW width (2 nm) structure led to regularly distributed quantum dots (QDs) and improved optical quality. However, thermal annealing at the same temperature of a sample of larger QW width (4 nm) did not show QD formation. In this situation, even higher local strains around QWs were speculated. Also, degraded optical quality was observed.

Cr⁴⁺-doped glass fiber by a laser-heated pedestal growth method is reported. By analyzing the absorption spectra, the transitions of Cr³⁺ and Cr⁴⁺ in the fibers are identified. With appropriate pumping wavelength and divalent doping concentration, both Cr³⁺ and Cr⁴⁺ emission bands can be excited simultaneously, and become comparable in their fluorescent intensities. As a result, more than 400-nm-width emission peaked at 1144 nm was generated at room temperature. As much as 12muW of amplified spontaneous emission was obtained by pumping with a 900-nm Ti : sapphire laser

The fluorescence enhancement in broadband Cr-doped fibers (CDFs) fabricated by a drawing tower with a redrawn powder-in-tube preform is proposed and demonstrated. The CDFs after heat treatment exhibited Cr⁴⁺ emission enhancement with spectral density of 200 pW/nm, verified by the formation of α-Mg₂SiO₄ nanocrystalline structures in the core of CDFs. The high fluorescence achievement in the CDFs is essential to develop a broadband CDF amplifier for next-generation optical communication systems.