The light trapping effect of zinc oxide (ZnO) ultraviolet photodetectors (UV PDs) has been established as a promising way to optimize the performance of optoelectronic devices. In this paper, we report a light trapping fabricated metal–semiconductor–metal structure, consisting of a ZnO nanowire array as a top layer light absorber supported by a ZnO film. The ZnO film is bridged between two interdigitated metal electrodes for collecting photo-generated carriers. In this connection, high-dense ZnO nanowires can be used as a light trapping unit and to transmit the photogenerated carriers towards the ZnO film. The photogenerated carriers diffuse along the longitudinal direction of the ZnO nanowire and then to the ZnO film and are collected by the applied bias electrode. Compared to present ZnO thin film UV PDs, our device has an effective light trapping effect and the enhancement of photo-generated carriers at the top interface by a ZnO nanowire array structure are highly beneficial to UV light detection as they can provide a long optical path and more surface area. In addition, when the device was connected with nanowires, a 10 times augment of responsivity appeared accompanied by a giant photo-to-dark current ratio (1.6 × 10 ³ ). This novel work not only enhanced fundamental improvement of nanowires to ZnO film UV PDs, but also provided a distinct contrast between light trapping UV PDs and ZnO film UV PDs.

The ability of ZnO photodetectors to absorb UV light plays a key role in enhancing responsivity and performance in electronic, optical, and photonic devices. Herein, the light trapping effect of ZnO is used to design and fabricate a novel honeycomb-like ZnO nanomaterial-based UV photodetector with an excellent photoelectric performance. Compared with the traditional ZnO film UV photodetector, the photoresponsivity of the film with honeycomb nanomaterials can reach up to 4.79 A W ⁻¹ , which is an improvement of about 300 times. In addition, the honeycomb ZnO nanomaterials UV photodetectors exhibit an improved light absorption, a very photo-to-dark current ratio (2.46 × 10 ³ ), and an excellent detectivity (4.61 × 10 ¹² Jones). The ZnO honeycomb nanostructure synthesized in this work exhibits a strong trapping effect, providing new insights into the research of nanomaterials used for UV photodetectors.

Ultraviolet (UV) photodetectors (PDs) based on nanowire (NW) hold significant promise for applications in fire detection, optical communication, and environmental monitoring. As optoelectronic devices evolve towards lower dimensionality, multifunctionality, and integrability, multicolor PDs have become a research hotspot in optics and electronic information. This study investigates the enhancement of detection capability in a light-trapping ZnO NW array through modification with Pt nanoparticles (NPs) via magnetron sputtering and hydrothermal synthesis. The optimized PD exhibits superior performance, achieving a responsivity of 12.49 A/W, detectivity of 4.07 × 10¹² Jones, and external quantum efficiency (EQE) of 4.19 × 10³%, respectively. In addition, the Pt NPs/ZnO NW/ZnO PD maintains spectral selectivity in the UV region. These findings show the pivotal role of Pt NPs in enhancing photodetection performance through their strong light absorption and scattering properties. This improvement is associated with localized surface plasmon resonance induced by the Pt NPs, leading to enhanced incident light and interfacial charge separation for the specialized configurations of the nanodevice. Utilizing metal NPs for device modification represents a breakthrough that positively affects the preparation of high-performance ZnO-based UV PDs.