The field of spintronics has attracted tremendous attention recently owing to its ability to offer a solution for the present-day problem of increased power dissipation in electronic circuits while scaling down the technology. Spintronic-based structures utilize electron’s spin degree of freedom, which makes it unique with zero standby leakage, low power consumption, infinite endurance, a good read and write performance, nonvolatile nature, and easy 3D integration capability with the present-day electronic circuits based on CMOS technology. All these advantages have catapulted the aggressive research activities to employ spintronic devices in memory units and also revamped the concept of processing-in-memory architecture for the future. This review article explores the essential milestones in the evolutionary field of spintronics. It includes various physical phenomena such as the giant magnetoresistance effect, tunnel magnetoresistance effect, spin-transfer torque, spin Hall effect, voltage-controlled magnetic anisotropy effect, and current-induced domain wall/skyrmions motion. Further, various spintronic devices such as spin valves, magnetic tunnel junctions, domain wall-based race track memory, all spin logic devices, and recently buzzing skyrmions and hybrid magnetic/silicon-based devices are discussed. A detailed description of various switching mechanisms to write the information in these spintronic devices is also reviewed. An overview of hybrid magnetic /silicon-based devices that have the capability to be used for processing-in-memory (logic-in-memory) architecture in the immediate future is described in the end. In this article, we have attempted to introduce a brief history, current status, and future prospectus of the spintronics field for a novice.

Spintronics is one of the growing research areas which has the capability to overcome the issues of static power dissipation and volatility suffered by the complementary metal-oxide-semiconductor (CMOS) industry. Magnetic tunnel junction (MTJ), one of the prominent spintronic devices, is not only used to develop the fully non-volatile-logic (NV-L) but combines magnetism and electronics to develop next-generation NV-memory (NV-M) and hybrid CMOS/MTJ circuits. To be specific towards hybrid CMOS/MTJ circuits, the fabrication of first hybrid full-adder in 2009, fabrication of MTJ based 240-tile NV-field programmable gate array (NV-FPGA) chip in 2013, fabrication of a 3000-6-input-LUTs based NV-FPGA chip in 2015, fabrication of MTJ based NV-logic-in-memory-large scale integration (NV-LIM-LSI) in 2017 and recently the fabrication of a full hybrid magnetic/CMOS System on Chip (SoC) under EU GREAT Project in 2019 has strengthened the belief and motivated the researcher to be continued in this domain. This review article aims to provide the complete design flow of hybrid CMOS/MTJ circuits developed using one of the fab compatible MTJ spintronic devices and its integration with conventional CMOS logic. The broad coverage of the article is MTJ construction, its switching mechanisms, a brief history of various compact models, reliability issues, and the concept of logic-in-memory (LIM) architecture. Finally, the article concludes with the challenges and future prospects of hybrid CMOS/MTJ circuits, which will motivate people in academia to cultivate research in this domain and industry to realize the prototype for a wide range of potential applications.

This paper presents the design, simulation and low-cost fabrication of microfluidic channel for biomedical application. Channel is fabricated using soft lithography technique. Printed Circuit Board (PCB) is used to make the master for the channel. Channel pattern is transferred on PCB plate using toner transfer technique followed by ferric chloride etching. Paper also discusses, the issues involved in PCB based master fabrication and their viable solutions. Glass is used as substrate material and the channel is made of Sylgard 184 Polydimethylsiloxane (PDMS). Channel is interfaced with a syringe pump to observe the fluid flow. To predict the behavior of the channel, FEM simulation is performed using COMSOL Multiphysics 5.2a. There is a good match between the theoretical, simulation and test results. Finally, to test the biocompatibility of the channel, genomic DNA is passed through the channel and gel electrophoresis analysis is performed.

Flexible supercapacitors based on laser-induced graphene (LIG) have emerged as a promising solution for scalable and cost-effective energy storage applications owing to their ease of fabrication and eco-friendly nature. However, the role of aqueous electrolytes in energy storage and conduction in thin-film electrodes has not yet been well explored. This study focused on optimizing the laser parameters, including the laser speed and power, to enhance the properties of LIG electrodes while investigating the influence of different aqueous electrolytes on electrochemical performance. The optimized laser parameters were a laser speed of 180 mm s⁻¹ and power of 40 W. The optimized electrodes were characterized using Raman spectroscopy, Fourier transform infrared spectroscopy, X-ray diffraction, scanning electron microscopy, and Brunauer–Emmett–Teller surface parameter study. The characterization results revealed that the optimized LIG was highly defective, with an I _D/I _G ratio of 2.38, surface area of 25.146 m² g⁻¹, and pore diameter of 13.74 nm. Supercapacitors with H₂SO₄ exhibited a superior areal capacitance (34 mF cm⁻²) because of their high ionic conductivity, redox activity, and efficient H⁺ ion transport (hydrated radius: 2.8 Å). Na₂SO₄ and KOH showed lower capacitance (15 and 17 mF cm⁻²), limited by larger Na⁺ and K⁺ hydrated radii. The defect density increased fivefold compared to the benchmarks, enhancing the electrochemical performance eightfold. These findings underscore the role of laser parameter optimization in improving LIG-based energy-storage devices.