This paper studies the radial alternating material phononic crystal (RAM-PnC). By simulating the band gap structure of the phononic crystal, a complete acoustic band gap was verified at the resonant frequency of 175.14 MHz, which can prevent the propagation of elastic waves in a specific direction. The proposed alternately arranged radial phononic crystal structure is applied to the thin-film piezoelectric-on-silicon (TPOS) MEMS resonator. The finite element simulation method increases the anchor quality factor (Q_anchor) from 60,596 to 659,536,011 at the operating frequency of 175.14 MHz, which is about 10,000 times higher. The motion resistance of the RAM-PnC resonator is reduced from 156.25 Ω to 48.31 Ω compared with the traditional resonator. At the same time, the insertion loss of the RAM-PnC resonator is reduced by 1.1 dB compared with the traditional resonator.

This paper proposes a radial alternating materials phononic crystal (RAM-PnC). By simulating the band gap structure of the phononic crystal, it is verified that there is a complete acoustic band gap at the resonant frequency of 175.14 MHz, which can prevent the propagation of elastic waves in a specific direction. The proposed alternately arranged radial phononic crystal structure is applied to the thin-film piezoelectric-on-silicon (TPOPS) MEMS resonator. The finite element simulation method increases the anchor quality factor (Qanchor) from 60596 to 659536011 at the operating frequency of 175.14 MHz, which is about 10,000 times higher. The motion resistance of the RAM-PnC resonator is reduced from 156.25 Ω to 48.31 Ω compared with the traditional resonator. At the same time, the insertion loss of the RAM-PnC resonator is reduced by 1.1 dB compared with the traditional resonator.