The sintering of high-performance ceramics with complex shapes at low temperatures has a significant impact on the future application of ceramics. A joint process of digital light processing (DLP) 3D printing technology and a nitrogen-gas pressure-assisted sintering method were proposed to fabricate AlN ceramics in the present work. Printing parameters, including exposure energy and time, were optimized for the shaping of green bodies. The effects of sintering temperature, as well as nitrogen pressure, on the microstructure, density, and thermal conductivity of AlN ceramics were systematically discussed. A high thermal conductivity of 168 W·m⁻¹·K⁻¹ was achieved by sintering and holding at a significantly reduced temperature of 1720 °C with the assistance of a 0.6 MPa nitrogen-gas pressure. Further, a large-sized AlN ceramic plate and a heat sink with an internal mini-channel structure were designed and successfully fabricated by using the optimized printing and sintering parameters proposed in this study. The heat transfer performance of the ceramic heat sink was evaluated by infrared thermal imaging, showing excellent cooling abilities, which provides new opportunities for the development of ceramic heat dissipation modules with complex geometries and superior thermal management properties.

Highly transparent Ho:Y₂O₃ ceramics for laser diode lighting were prepared using the vacuum sintering method with 0.3 at.% Nb₂O₅ as a sintering additive. The microstructures, transmittance, and luminescence properties of the Ho:Y₂O₃ ceramic samples were investigated in detail. The transmittance levels of all samples with various Ho³⁺ concentrations reached ~81.5% (2 mm thick) at 1100 nm. Under the excitation of 363 nm (ultraviolet) or 448 nm (blue) light, Ho:Y₂O₃ transparent ceramic samples showed that green emission peaked at 550 nm. The emission intensity was strongly affected by the concentration of Ho³⁺ ions, reaching its highest level in the sample doped with 1 at.% Ho³⁺. The CIE coordinates of the luminescence were in the green region (i.e., the CIE coordinates of the sample doped with 1 at.% Ho³⁺ were [0.27, 0.53] and [0.30, 0.69], under the excitation of 363 nm and 448 nm light, respectively). The possibility of its application as laser diode lighting was reported. Under the excitation of 450 nm blue laser, the sample doped with 0.5 at.% Ho³⁺ had the best performance: the saturated luminous flux, lumen efficiency, and the luminescence saturation power densities were 800 lm, 57.7 lm/W, and 17.6 W/mm², respectively. Furthermore, the materials have high thermal conductivity and mechanical strength due to their host of rare-earth sesquioxide. Thus, Ho:Y₂O₃ transparent ceramics are expected to be a promising candidate for green-light-emitting devices for solid-state lighting, such as laser diode lighting.