Previous studies have shown that undoped and doped SnO₂ thin films have better optical and electrical properties. This study aims to investigate the thermoelectric properties of two distinct semiconducting oxide thin films, namely SnO₂ and F-doped SnO₂ (FTO), by the nebulizer spray pyrolysis technique. An X-ray diffraction study reveals that the synthesized films exhibit a tetragonal structure with the (200) preferred orientation. The film structural quality increases from SnO₂ to FTO due to the substitution of F⁻ ions into the host lattice. The film thickness increases from 530 nm for SnO₂ to 650 nm for FTO films. Room-temperature electrical resistivity decreases from (8.96 ± 0.02) × 10⁻² Ω·cm to (4.64 ± 0.01) × 10⁻³ Ω·cm for the SnO₂ and FTO thin films, respectively. This is due to the increase in the carrier density of the films, (2.92 ± 0.02) × 10¹⁹ cm⁻³ (SnO₂) and (1.63 ± 0.03) × 10²⁰ cm⁻³ (FTO), caused by anionic substitution. It is confirmed that varying the temperature (K) enhances the electron transport properties. The obtained Seebeck coefficient (S) increases as the temperature is increased, up to 360 K. The synthesized films exhibit the S value of −234 ± 3 μV/K (SnO₂) and −204 ± 3 μV/K (FTO) at 360 K. The estimated power factor (PF) drastically increases from ~70 (μW/m·K²) to ~900 (μW/m·K²) for the SnO₂ and FTO film, respectively.