A novel silicon on insulator (SOI)-lateral trench insulated gate bipolar transistor (LTIGBT) featuring a self-biased pMOS (SBP), named SBP-LTIGBT, is proposed and investigated. The gate and drain of SBP are shortly connected with emitter electrode, and the source is connected with the P-buried, which introduces automatically turn-off and turn-on function. At the forward conduction state, the SBP is turned off when ${V}_{\text {GS,P}} > {V}_{\text {TH,P}}$ , and the SBP-LTIGBT shows the same electrical characteristics as conventional LTIGBT. The SBP is automatically turn-on with reduced saturation current when ${V}_{\text {GS,P}}< {V}_{\text {TH,P}}$ . At the switching state, the SBP is always turned on to accelerate the extraction of the excessive carriers; consequently, the turn-off loss ${E}_{\text {OFF}}$ is reduced. As a result, the tradeoff relationship between forward conduction voltage ${V}_{\text {ON}}$ and ${E}_{\text {OFF}}$ is largely improved. The short-circuit tolerance time ( ${T}_{\text {SC}}{)}$ of the SBP-LTIGBT is $10.5~\mu \text{s}$ , which is extended by 3.4, 2, and 1.4 times longer than that of LTIGBT with triple-RESURF (TR-LTIGBT), LTIGBT with double-RESURF (DR-LTIGBT), and conventional LTIGBT (C-LTIGBT), respectively. Furthermore, when ${V}_{\text {ON}}$ is 1.4 V, ${E}_{\text {OFF}}$ of the SBP-LTIGBT is 0.36 mJ/cm2, which is reduced by 73%, 60%, and 51% than that of C-LTIGBT, DR-LTIGBT, and TR-LTIGBT, respectively.