Ekaterina Ponizovskaya-Devine

Dr. Ekaterina Ponizovskaya-Devine

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Research Focus & Metrics

Academic Career Length

32Years (1995-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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3 April 2017 in Nature Photonics
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Journal Article
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YGYang Gao
Yang Gao
HCHilal Cansizoglu
Hilal Cansizoglu
KPKazim G. Polat
Kazim G. Polat
SGSoroush Ghandiparsi
Soroush Ghandiparsi
AKAhmet Kaya
Ahmet Kaya
MIM. Saif Islam
M. Saif Islam

18 February 2002 in Applied Physics Letters
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Journal Article
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NGN. Garcia
N. Garcia
EPEkaterina Ponizovskaya-Devine
Ekaterina Ponizovskaya-Devine
JXJohn Q. Xiao
John Q. Xiao
We theoretically discuss the possibility of having materials with zero effective permittivity that would create band gaps in a wide range of frequencies up to the visible. The physical realization of these materials is also discussed in terms of embedding metallic nanoparticles and nanowires in a dielectric medium. In the limit of long wavelengths, these composites will behave like a homogeneous medium with zero permittivity that will completely reflect electromagnetic waves. We present transmittivity calculations by using finite-difference time domain for periodic structures that proves the concept and shows the validity of the long wavelength approximation. The striking result is that the cutoff frequency ωc is determined by the lattice parameter of the composite. By properly choosing the lattice constant of the composite and permittivity of metal and dielectric constituents, we can have full band gaps at any frequency range but especially in the visible.

21 June 2018 in Photonics Research
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HCHilal Cansizoglu
Hilal Cansizoglu
CBCesar Bartolo-Perez
Cesar Bartolo-Perez
YGYang Gao
Yang Gao
EPEkaterina Ponizovskaya-Devine
Ekaterina Ponizovskaya-Devine
SGSoroush Ghandiparsi
Soroush Ghandiparsi
MIM. Saif Islam
M. Saif Islam
In this paper, high-speed surface-illuminated Ge-on-Si pin photodiodes with improved efficiency are demonstrated. With photon-trapping microhole features, the external quantum efficiency (EQE) of the Ge-on-Si pin diode is >80% at 1300 nm and 73% at 1550 nm with an intrinsic Ge layer of only 2 μm thickness, showing much improvement compared to one without microholes. More than threefold EQE improvement is also observed at longer wavelengths beyond 1550 nm. These results make the microhole-enabled Ge-on-Si photodiodes promising to cover both the existing C and L bands, as well as a new data transmission window (1620–1700 nm), which can be used to enhance the capacity of conventional standard single-mode fiber cables. These photodiodes have potential for many applications, such as inter-/intra-datacenters, passive optical networks, metro and long-haul dense wavelength division multiplexing systems, eye-safe lidar systems, and quantum communications. The CMOS and BiCMOS monolithic integration compatibility of this work is also attractive for Ge CMOS, near-infrared sensing, and communication integration.

1 February 2007 in Applied Physics A
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Wei WuWei Wu
Wei Wu
EKE. Kim
E. Kim
EPEkaterina Ponizovskaya-Devine
Ekaterina Ponizovskaya-Devine
YLY. Liu
Y. Liu
ZYZ. Yu
Z. Yu
RWR.S. Williams
R.S. Williams

17 September 2009 in Optics Express
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DCDavid J. Cho
David J. Cho
Wei WuWei Wu
Wei Wu
EPEkaterina Ponizovskaya-Devine
Ekaterina Ponizovskaya-Devine
PCPratik Chaturvedi
Pratik Chaturvedi
ABAlexander M. Bratkovsky
Alexander M. Bratkovsky
YSY. Ron Shen
Y. Ron Shen
Optics InfoBase is the Optical Society's online library for flagship journals, partnered and copublished journals, and recent proceedings from OSA conferences.

1 August 2017 in ACS Photonics
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Journal Article
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YGYang Gao
Yang Gao
HCHilal Cansizoglu
Hilal Cansizoglu
SGSoroush Ghandiparsi
Soroush Ghandiparsi
CBCesar Bartolo-Perez
Cesar Bartolo-Perez
EPEkaterina Ponizovskaya-Devine
Ekaterina Ponizovskaya-Devine
MIM. Saif Islam
M. Saif Islam