Nanostructured Zn_1−xMg_xO (x = 0–0.04) thin films were deposited on a glass substrate through the sol–gel dip coating. X-ray diffraction indicates the films exhibited a hexagonal wurtzite structure with maximum intensity at (1 0 1) plane. The intensity of the diffraction peak decreased with increasing the Mg doping concentration. The crystallite size varied as a function of the increase in Mg doping concentration. The deposits showed a nanograin structure for pure ZnO, which changes in the presence of Mg content, and elemental composition was confirmed by using energy-dispersive spectra. Optical analysis showed a significant increase in transmittance from 80 to 90% in the visible range and a decrement in the optical bandgap energy from 3.305 to 3.261 eV with an increase in Mg doping. Photoluminescence spectra showed there was a quenching of near band edge emission with doping concentration and a red emission for Zn_0.96Mg_0.04O film. The color coordinates of the deposits were in the nearly white light region, showing the maximal white light emission.

This research work focuses on the influence of Neodymium (Nd) doping (0–10 at.%) on the structural, optical, electrical, and photo-response properties of Zinc Oxide thin films deposited on glass substrates by cost-effective spray pyrolysis technique. For all the deposited films, the X-ray diffraction peaks matched the hexagonal wurtzite structure of ZnO with the maximum intensity along the (1 0 1) plane. Using XRD data, the crystallite size, dislocation density, and micro-strain of the films were estimated. Compared to other films, Zn_0.96Nd_0.04O film exhibited higher crystallinity ~ 18 nm. At higher doping concentrations, a fibrous-granular mixed structure was observed. Above 80 percentage of transparency in the visible region and bandgap of 3.42 eV was observed for the Zn_0.96Nd_0.04O film. The decrease in Urbach energy with increase in the doping concentration indicated the improvement in crystallinity. The peaks related to band edge emission, zinc, and oxygen-related defects were observed in the photoluminescence analysis also increased band edge emission and lesser defects were observed in the Zn_0.96Nd_0.04O film. The highest charge carrier concentration ~ 1.7 × 10¹⁷ cm⁻³ and mobility ~ 62.8 cm²/Vs were noticed in of Zn_0.96Nd_0.04O film. When exposed to UV light, Zn_0.96Nd_0.04O film exhibited the maximum photocurrent ~ 10⁻⁴ A. Hence the Zn_0.96Nd_0.04O film can be used as a UV photodetector. Graphical Abstract