Breakdown characteristics play an important role in silicon carbide (SiC) power devices; however, the wide bandgap of SiC poses a challenge for numerical simulation of breakdown characteristics. In this work, a self-developed simulator employing a novel numerical processing method to prevent convergence issues, based on semi-classical transport models and including several kinds of mobility, generation and recombination models, is used to investigate the performance and breakdown characteristics of 4H-SiC MOSFETs in high-power applications. Good agreement between our simulator and an experiment and commercial TCAD was achieved. The simulator has good stability and convergence and can be used as a powerful tool to design and optimize semiconductor devices. Further, the breakdown characteristics are evaluated with different factors, including lattice temperature, device structure and doping profiles. Our results show that the doping profile plays the most important role in the breakdown voltage, followed by the device structure, while the impact of lattice temperature is found to be minimal.

Two type CMOS-compatible complementary phototransistors (CPTs) with NMOS or PMOS transistor are proposed in this work for in-sensor vector-matrix multiplication (VMM). The CPT is fabricated by the 22nm FDSOI process technology and composed of a MOSFET with a p-doped well under the buried oxide (BOX). The well serves for photoelectron generation and affects the on-state current of the MOSFET by the photoelectrons. The bidirectional and tunable photoresponsivity characteristics as well as the optical-electrical signed multiplication operation (average error <2.5%) are experimentally demonstrated in the pair of CPTs. The in-sensor VMM is verified by typical artificial neural networks using the CPT array as the image-input layer. Simulated results show slight inference accuracy losses (<1%) in LeNet3 for MNIST and VGG11/VGG16 for CIFAR-10 recognition.

The interdomain screening effect of the multidomain ferroelectric thin film is investigated within the framework of a nucleation-limited switching (NLS) model through 3-D simulations. The study investigates its dependence on the domain size and its impact on the polarization switching. It is revealed that the depolarization field in partially polarized ferroelectrics is nonuniform, and it plays a significant role in polarization switching dynamics when the external applied bias is moderate.

The silicon-on-I_nsulator (SOI) based one transistor (1-T) pixel sensor is a promising candidate for a high-resolution image sensor and in-sensor computing. In this work, a compact model for the photoresponse of a well-depleted SOI 1-T pixel sensor is proposed from the perspective of the physical process. The model explains the photoelectron accumulation, photoelectron redistribution, and modulation of the transistor according to the electron drift/diffusion mechanism, capacitor–voltage relationship, and current solution from BSIM-IMG. The model agrees well with the experimental results from the 1-T pixel sensor fabricated by the 22 nm fully depleted SOI technology, as well as the simulation results from technology computer-aided design. The extraction scheme of the model parameters is also provided to facilitate the use of the model.