The influence of arsenazo-I additive on electrochemical anodizing of pure aluminum foil in malonic acid was studied. Aluminum dissolution increased with increasing arsenazo-I concentration. The addition of arsenazo-I also led to an increase in the volume expansion factor up to 2.3 due to the incorporation of organic compounds and an increased number of hydroxyl groups in the porous aluminum oxide film. At a current density of 15 mA·cm⁻² and an arsenazo-I concentration 3.5 g·L⁻¹, the carbon content in the anodic alumina of 49 at. % was achieved. An increase in the current density and concentration of arsenazo-I caused the formation of an arsenic-containing compound with the formula Na_1,5Al₂(OH)_4,5(AsO₄)₃·7H₂O in the porous aluminum oxide film phase. These film modifications cause a higher number of defects and, thus, increase the ionic conductivity, leading to a reduced electric field in galvanostatic anodizing tests. A self-adjusting growth mechanism, which leads to a higher degree of self-ordering in the arsenazo-free electrolyte, is not operative under the same conditions when arsenazo-I is added. Instead, a dielectric breakdown mechanism was observed, which caused the disordered porous aluminum oxide film structure.

The paper breaks the general concepts and shows that pore formation is possible in anodic aluminum barrier oxide by anodizing of pure Al, and also presents the results of electrochemical anodizing in boric acid and citrate buffer aqueous solutions of homogeneous binary alloys AlCu (4 wt.%), AlZn (3 wt.%) and AlAg (5.2 wt.% and 16.2 wt.%). Barrier anodizing allowed obtaining Al₂O₃ thin films doped with copper, zinc and silver. The anodizing behavior and the effect of anodic current density on the charge were studied, and scanning electron microscopy, X-ray photoelectron spectroscopy and Auger electron spectroscopy analyses were performed. The doped alumina thin films, which are a mixture of Al₂O₃, Cu₂O, ZnO, Ag₂O, AgO and promising double metal oxides CuAlO₂, AgAlO₂ and ZnAl₂O₄, are promising for use as resistive switching, photoelectron, mechanical, photo-thermoelectric and fluorescence materials; sensors; and transparent conductive and photocatalyst films.

Direct incorporation of Li during the growth of anodic TiO₂ was achieved by a one-step fabrication process.

Elementary Al and Mo powder mixtures have been processed by high energy ball milling up to milling times of 100 hours. The shift of the pitting potential and the X ray analysis of green milled samples showed that part of the Mo has formed a supersaturated solid solution of Mo in Al. Elementary Mo powder, however, was still present after 100 hours of milling. Sintering led to the formation of the intermetallic Al12Mo phase

The galvanostatic anodizing results of specially prepared high-purity aluminum in aqueous solutions of complex compounds K₃[Co(C₂O_4)_3] and K₂[Zn(edta)] of various concentrations in the current density ranges 1.5-1.10·10² and 1.5-30 mA·cm^-2, respectively. The kinetic features of anodizing have been established, indicating the occurrence of an oscillatory electrochemical process. Morphological features of a flaky and loose nature for K₂[Zn(edta)] and monolithic for K₃[Co(C₂O_4)_3], uncharacteristic for anodic aluminum oxide, were revealed. The elemental composition, IR spectroscopic and photoluminescent characteristics of the formed oxides are shown. Keywords: anodic aluminum oxide, chelated complex compounds, anodizing.