The volumetric growth, composition, and morphology of porous alumina films fabricated by reduced temperature 280 K galvanostatic anodizing of aluminum foil in 0.4, 1.0, and 2.0 M aqueous sulfuric acid with 0.5–10 mA·cm⁻² current densities were investigated. It appeared that an increase in the solution concentration from 0.4 to 2 M has no significant effect on the anodizing rate, but leads to an increase in the porous alumina film growth. The volumetric growth coefficient increases from 1.26 to 1.67 with increasing current density from 0.5 to 10 mA·cm⁻² and decreases with increasing solution concentration from 0.4 to 2.0 M. In addition, in the anodized samples, metallic aluminum phases are identified, and a tendency towards a decrease in the aluminum content with an increase in solution concentration is observed. Anodizing at 0.5 mA·cm⁻² in 2.0 M sulfuric acid leads to formation of a non-typical nanostructured porous alumina film, consisting of ordered hemispheres containing radially diverging pores.

The chemical dissolution—in 0.1 M solutions of phosphoric, malonic, citric, sulfosalicylic, and tartaric acids and 0.6 M solutions of sulfuric, oxalic, malonic, phosphoric, tartaric, and citric acids—of aluminum (Al) and its barrier anodic oxide, with thicknesses of 240 and 350 nm, produced during the anodization of Al deposited on a sitall substrate and Al foil, respectively, in a 1% citric acid aqueous solution, was investigated. Signs of chemical dissolution for 0.1 M phosphoric acid solution and 0.6 M concentrations of all the listed solutions were found. It was shown that the dissolution rate and the nature of its change depend on the acid nature, the state of the sample surface, and the classification of the electrolytes according to their degrees of aggressiveness with respect to aluminum.

Three types of niobia nanostructured films (so-called native, planarized, and column-like) were formed on glass substrates by porous alumina assisted anodizing in a 0.2 M aqueous solution of oxalic acid in a potentiostatic mode at a 53 V and then reanodizing in an electrolyte containing 0.5 M boric acid and 0.05 M sodium tetraborate in a potentiodynamic mode by raising the voltage to 230 V, and chemical post-processing. Anodic behaviors, morphology, and optical properties of the films have been investigated. The interference pattern of native film served as the basis for calculating the effective refractive index which varies within 1.75–1.54 in the wavelength range 190–1100 nm. Refractive index spectral characteristics made it possible to distinguish a number of absorbance bands of the native film. Based on the analysis of literature data, the identified oxide absorbance bands were assigned. The effective refractive index of native film was also calculated using the effective-medium models, and was in the range of 1.63–1.68. The reflectance spectra of all films show peaks in short- and long-wave regions. The presence of these peaks is due to the periodically varying refractive index in the layers of films in two dimensions. FDTD simulation was carried out and the morphology of a potential 2-D photonic crystal with 92% (wavelength 462 nm) reflectance, based on the third type of films, was proposed.

The influence of arsenazo-I additive on electrochemical anodizing of pure aluminum foil in malonic acid was studied. Aluminum dissolution increased with increasing arsenazo-I concentration. The addition of arsenazo-I also led to an increase in the volume expansion factor up to 2.3 due to the incorporation of organic compounds and an increased number of hydroxyl groups in the porous aluminum oxide film. At a current density of 15 mA·cm⁻² and an arsenazo-I concentration 3.5 g·L⁻¹, the carbon content in the anodic alumina of 49 at. % was achieved. An increase in the current density and concentration of arsenazo-I caused the formation of an arsenic-containing compound with the formula Na_1,5Al₂(OH)_4,5(AsO₄)₃·7H₂O in the porous aluminum oxide film phase. These film modifications cause a higher number of defects and, thus, increase the ionic conductivity, leading to a reduced electric field in galvanostatic anodizing tests. A self-adjusting growth mechanism, which leads to a higher degree of self-ordering in the arsenazo-free electrolyte, is not operative under the same conditions when arsenazo-I is added. Instead, a dielectric breakdown mechanism was observed, which caused the disordered porous aluminum oxide film structure.