掺镱超快光纤激光器因其光束质量好、输出功率高而被广泛应用于科学研究、工业加工、医疗诊断等方面。大模场面积的棒状光纤可以提供平均功率在百瓦量级的高能量飞秒、百微焦量级的超快脉冲输出，本文基于掺镱棒状光纤搭建了啁啾脉冲放大系统，详细研探究脉冲1 W-30 W输入功率对脉冲的放大及压缩的影响结果。实试验结果表明，在低放大功率下（<160 W）提升增加输入功率可提升放大效率且脉冲压缩质量基本不受影响；当放大功率进一步增加时，，在高功率下（>200 W）需选择合适的输入功率避免积累过量非线性相位。该啁啾脉冲放大系统可将20 W圆偏光输入放大至305 W，压缩后产生平均脉冲功率为273 W、脉冲能量为273 μJ的、脉宽264 fs脉冲，脉冲平均功率和峰值功率比Martin E. V. Pedersen课题组已报道结果提升了约一倍。

We applied excimer laser annealing (ELA) on indium-zinc oxide (IZO) and IZO/indium-gallium-zinc oxide (IGZO) heterojunction thin-film transistors (TFTs) to improve their electrical characteristics. The IZO and IZO/IGZO heterojunction thin films were prepared by the physical vapor deposition method without any other annealing process. The crystalline state and composition of the as-deposited film and the excimer-laser-annealed films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. In order to further enhance the electrical performance of TFT, we constructed a dual-heterojunction TFT structure. The results showed that the field-effect mobility could be improved to 9.8 cm²/V·s. Surprisingly, the device also possessed good optical stability. The electron accumulation at the a-IZO/HfO, HfO/a-IGZO, and a-IGZO/gate insulator (GI) interfaces confirmed the a-IGZO-channel conduction. The dual-heterojunction TFT with IZO/HfO/a-IGZO-assisted ELA provides a guideline for overcoming the trade-off between high mobility (μ) and positive V_Th control for stable enhancement mode operation with increased I_D.