A new measurement of the magnetic anomaly a μ of the positive muon is presented based on data taken from 2020 to 2023 by the Muon g − 2 Experiment at Fermi National Accelerator Laboratory (FNAL). This dataset contains over 2.5 times the total statistics of our previous results. From the ratio of the precession frequencies for muons and protons in our storage ring magnetic field, together with precisely known ratios of fundamental constants, we determine a μ = 1 165 920 710 ( 162 ) × 10 − 12 (139 ppb) for the new datasets, and a μ = 1 165 920 705 ( 148 ) × 10 − 12 (127 ppb) when combined with our previous results. The new experimental world average, dominated by the measurements at FNAL, is a μ ( exp ) = 1 165 920 715 ( 145 ) × 10 − 12 (124 ppb). The measurements at FNAL have improved the precision on the world average by over a factor of 4.

We present details on a new measurement of the muon magnetic anomaly, $a_{\mu }=(g_{\mu }-2)/2$. The result is based on positive muon data taken at Fermilab’s Muon Campus during the 2019 and 2020 accelerator runs. The measurement uses $3.1\mathrm{GeV}/c$ polarized muons stored in a 7.1-m-radius storage ring with a 1.45 T uniform magnetic field. The value of $a_{\mu }$ is determined from the measured difference between the muon spin precession frequency and its cyclotron frequency. This difference is normalized to the strength of the magnetic field, measured using nuclear magnetic resonance. The ratio is then corrected for small contributions from beam motion, beam dispersion, and transient magnetic fields. We measure $a_{\mu }=116592057(25)\times {10}^{-11}$ (0.21 ppm). This is the world’s most precise measurement of this quantity and represents a factor of 2.2 improvement over our previous result based on the 2018 dataset. In combination, the two datasets yield $a_{\mu }(\mathrm{FNAL})=116592055(24)\times {10}^{-11}$ (0.20 ppm). Combining this with the measurements from Brookhaven National Laboratory for both positive and negative muons, the new world average is $a_{\mu }(\exp )=116592059(22)\times {10}^{-11}$ (0.19 ppm).

Single-photon sources are important for integrated photonics and quantum technologies, and can be used in quantum key distribution, quantum computing, and sensing. Color centers in the solid state are a promising candidate for the development of the next generation of single-photon sources integrated in quantum photonics devices. They are point defects in a crystal lattice that absorb and emit light at given wavelengths and can emit single photons with high efficiency. The landscape of color centers has changed abruptly in recent years, with the identification of a wider set of color centers and the emergence of new solid-state platforms for room-temperature single-photon generation. This review discusses the emerging material platforms hosting single-photon-emitting color centers, with an emphasis on their potential for the development of integrated optical circuits for quantum photonics.

Single-photon detectors have gained significant attention recently, driven by advancements in quantum information technology. Applications such as quantum key distribution, quantum cryptography, and quantum computation demand the ability to detect individual quanta of light and distinguish between single-photon states and multi-photon states, particularly when operating within waveguide systems. Although single-photon detector fabrication has been established for some time, integrating detectors with waveguides using new materials with suitable structural and electronic properties, especially at telecommunication wavelengths, creates more compact source-line-detector systems. This review explores the state of the art of single-photon detector research and examines the potential breakthroughs offered by novel low-dimensional materials in this field.

The determination of the direction of a stellar core collapse via its neutrino emission is crucial for the identification of the progenitor for a multimessenger follow-up. A highly effective method of reconstructing supernova directions within the Deep Underground Neutrino Experiment (DUNE) is introduced. The supernova neutrino pointing resolution is studied by simulating and reconstructing electron-neutrino charged-current absorption on Ar 40 and elastic scattering of neutrinos on electrons. Procedures to reconstruct individual interactions, including a newly developed technique called “brems flipping,” as well as the burst direction from an ensemble of interactions are described. Performance of the burst direction reconstruction is evaluated for supernovae happening at a distance of 10 kpc for a specific supernova burst flux model. The pointing resolution is found to be 3.4 degrees at 68% coverage for a perfect interaction-channel classification and a fiducial mass of 40 kton, and 6.6 degrees for a 10 kton fiducial mass respectively. Assuming a 4% rate of charged-current interactions being misidentified as elastic scattering, DUNE’s burst pointing resolution is found to be 4.3 degrees (8.7 degrees) at 68% coverage. Published by the American Physical Society 2025

Integrated photonics on Silicon-On-Insulator (SOI) substrates is a well developed research field that has already significantly impacted various fields, such as quantum computing, micro sensing devices, biosensing, and high-rate communications. Although quite complex circuits can be made with such technology, everything is based on a few ’building blocks’ which are then combined to form more complex circuits. This review article provides a detailed examination of the state of the art of integrated photonic building blocks focusing on passive elements, covering fundamental principles and design methodologies. Key components discussed include waveguides, fiber-to-chip couplers, edges and gratings, phase shifters, splitters and switches (including y-branch, MMI, and directional couplers), as well as subwavelength grating structures and ring resonators. Additionally, this review addresses challenges and future prospects in advancing integrated photonic circuits on SOI platforms, focusing on scalability, power efficiency, and fabrication issues. The objective of this review is to equip researchers and engineers in the field with a comprehensive understanding of the current landscape and future trajectories of integrated photonic components on SOI substrates with a 220 nm thick device layer of intrinsic silicon.