In this paper, the passivation quality of crystalline silicon (c-Si) wafers, when passivated by atomic layer deposited aluminum oxide (ALD AlO _x ), is investigated. Specifically, we investigated the effect of surface modification of the c-Si interface prior to the ALD AlO _x deposition (via -H and -OH termination of the c-Si wafer) over a large range of AlO _x thicknesses (0.4-80 nm). Fourier transform infrared (FTIR) studies confirmed the presence of -H and -OH termination on c-Si surface. In general, surface passivation on -OH terminated wafers was found to be better than their -H terminated counterparts, which is consistent with correspondingly measured density of interface defects, and density of fixed interface charge. In all cases, the formation of an additional interfacial SiO _x layer between the c-Si/AlO _x interface was revealed. The corresponding Si-oxide peaks, as measured by X-ray photoelectron spectroscopy (XPS), were found to be stronger for -OH terminated c-Si surfaces. The thickness of the interfacial SiO _x layer was measured by high-resolution transmission electron microscopy. Thus, despite the superior surface passivation of -OH terminated c-Si wafers, for the ALD AlO _x tunnel layers of 0.4-2 nm (i.e., on the order necessary to form passivated contacts for solar cells), there is a trade-off between the better passivation achieved by the thicker SiO _x interfacial layers (-OH termination), and the correspondingly higher tunneling resistance due to the overall larger effective tunnel layer thickness.

Objective: This study aims to comprehend the current state of integration between artificial intelligence (AI) and the human resources (HR) sector. Specifically, it investigates the implementation of AI in HR, explores the challenges associated with this integration, and examines potential hazards related to data usage, AI's perceived gimmickry, and algorithmic governance. Method: Employing a descriptive research design, this study relies on secondary data as no primary research was conducted. Information was collected from research papers, books, websites, blogs on human resources, and survey reports released by various research groups. Results: The analysis reveals that AI's adoption in the HR sector is still in its early stages despite significant advancements made by start-ups. Challenges stem from various factors, including data complexities, the risk of AI being seen as a mere gimmick, and concerns about algorithmic governance. The multifaceted nature of AI introduces diverse approaches and applications, from algorithms to deep learning and natural language processing. The study also differentiates between strong AI (general intelligence) and weak AI (problem-specific intelligence). The study emphasizes that HR is a pivotal element of any business, directly impacting employee well-being, communication, and productivity. The integration of AI has brought notable improvements by automating low-value HR tasks, freeing resources for strategic work. AI's capacity to analyze vast data volumes rapidly promises enhanced employee experiences across talent management and recruitment. Conclusions: In conclusion, AI's integration into the HR sector is still evolving, with both promise and challenges. The study underscores the need for addressing the complexities of data utilization, avoiding AI's reduction to mere gimmickry, and establishing responsible algorithmic governance. By understanding the nuances of AI integration in HR, organizations can leverage its potential to enhance productivity, communication, and employee experiences.

The surface passivation performance of atomic layer deposited ultra-thin aluminium oxide layers with different thickness in the tunnel layer regime, i.e., ranging from one atomic cycle (∼0.13 nm) to 11 atomic cycles (∼1.5 nm) on n-type silicon wafers is studied. The effect of thickness and thermal activation on passivation performance is investigated with corona-voltage metrology to measure the interface defect density D _it ( E ) and the total interface charge Q _tot . Furthermore, the bonding configuration variation of the AlO _x films under various post-deposition thermal activation conditions is analyzed by Fourier transform infrared spectroscopy. Additionally, poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) is used as capping layer on ultra-thin AlO _x tunneling layers to further reduce the surface recombination current density to values as low as 42 fA/cm ² . This work is a useful reference for using ultra-thin ALD AlO _x layers as tunnel layers in order to form hole selective passivated contacts for silicon solar cells.