Raksha Dubey

Ms. Raksha Dubey

orcid

Research Focus & Metrics

Academic Career Length

3Years (2024-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

View All Publications
29 February 2024 in Micromachines
Verified
Journal Article
Open access
PDF file
JUJoin Uddin
Join Uddin
RDRaksha Dubey
Raksha Dubey
VBVinaayak Sivam Balasubramaniam
Vinaayak Sivam Balasubramaniam
JKJeff Kabel
Jeff Kabel
VKVedika Khare
Vedika Khare
Yoke Khin YapYoke Khin Yap
Yoke Khin Yap
In this review, we examine recent progress using boron nitride (BN) and molybdenum disulfide (MoS2) nanostructures for electronic, energy, biomedical, and environmental applications. The scope of coverage includes zero-, one-, and two-dimensional nanostructures such as BN nanosheets, BN nanotubes, BN quantum dots, MoS2 nanosheets, and MoS2 quantum dots. These materials have sizable bandgaps, differentiating them from other metallic nanostructures or small-bandgap materials. We observed two interesting trends: (1) an increase in applications that use heterogeneous materials by combining BN and MoS2 nanostructures with other nanomaterials, and (2) strong research interest in environmental applications. Last, we encourage researchers to study how to remove nanomaterials from air, soil, and water contaminated with nanomaterials. As nanotechnology proceeds into various applications, environmental contamination is inevitable and must be addressed. Otherwise, nanomaterials will go into our food chain much like microplastics.

1 April 2025 in APL Materials
Verified
Journal Article
Open access
RDRaksha Dubey
Raksha Dubey
MCMatthew Cowles
Matthew Cowles
ZSZohreh Salimi
Zohreh Salimi
XLXiuling Liu
Xiuling Liu
RORodney Oakley
Rodney Oakley
Yoke Khin YapYoke Khin Yap
Yoke Khin Yap
This review examines three aspects of hexagonal boron nitride (h-BN) nanomaterials: properties, synthesis methods, and biomedical applications. We focus the scope of review on three types of h-BN nanostructures: boron nitride nanosheets (BNNSs, few-layered h-BN, larger than ∼100 nm in lateral dimensions), boron nitride quantum dots (BN QDs, smaller than ∼10 nm in all dimensions, with inherent excitation-dependent fluorescence), and boron nitride dots (BN dots, smaller than ∼10 nm in all dimensions, wide bandgap without noise fluorescence). The synthesis methods of BNNSs, BN QDs, and BN dots are summarized in top-down and bottom-up approaches. Future synthesis research should focus on the scalability and the quality of the products, which are essential for reproducible applications. Regarding biomedical applications, BNNSs were used as nanocarriers for drug delivery, mechanical reinforcements (bone tissue engineering), and antibacterial applications. BN QDs are still limited for non-specific bioimaging applications. BN dots are used for the small dimension to construct high-brightness probes (HBPs) for gene sequence detections inside cells. To differentiate from other two-dimensional materials, future applications should focus on using the unique properties of BN nanostructures, such as piezoelectricity, boron neutron capture therapy (BNCT), and their electrically insulating and optically transparent nature. Examples would be combining BNCT and chemo drug delivery using BNNSs, and using BN dots to form HBPs with enhanced fluorescence by preventing fluorescence quenching using electrically insulating BN dots.

15 April 2026 in Micromachines
Verified
Journal Article
Open access
PDF file
KNKumar Neupane
Kumar Neupane
JKJeff Kabel
Jeff Kabel
JUJoin Uddin
Join Uddin
RDRaksha Dubey
Raksha Dubey
RORojina Ojha
Rojina Ojha
Yoke Khin YapYoke Khin Yap
Yoke Khin Yap
The discovery of quantum dots (QDs) earned a Nobel Prize and has led to widespread applications in research and technology. In this review, we focus on the use of QDs in solid-state solar cells (QDSCs). We begin with an overview of the basic principles of SCs. Then, we discuss how device architecture has developed over recent decades, setting the stage for the final section on fourth-generation solar cells (Perspective section). We also highlight progress in material development, starting with lead- and cadmium-based QDs and progressing to more recent carbon- and perovskite-based QDs. Additionally, we review materials used for electron-transport layers (ETLs) and hole-transport layers (HTLs). The articles also present recent advances in QDSCs across various QD types. In the final section, we recommend that future research focus on three main areas: QD active-layer materials, material interfaces, and device architecture. These efforts could lead to sustainable QDSCs that potentially surpass the Shockley–Queisser (SQ) limit.