This study investigates the $\gamma $ -ray irradiation dose-dependent radiation damage effects in Ti/Au- $\beta $ -Ga₂O₃-Ti/Au metal-semiconductor-metal (MSM) solar-blind photodetectors. By analyzing the photoresponse under varying cumulative irradiation doses, we systematically examine the influence of total ionizing dose (TID) on the photodetector, aiming to evaluate the degradation behavior and underlying mechanisms. At low irradiation doses, the majority carrier removal effect in Ga₂O₃, induced by Compton scattering-generated defects that trap or compensate carriers, leads to a reduction in dark current. In contrast, high-dose irradiation promotes the formation of deep-level complex defects through the combination of ${V}_{\text {O}}$ and ${V}_{\text {Ga}}$ , triggering nonradiative recombination and leading to a sharp increase in dark current. Numerical simulations based on technology computer-aided design (TCAD) were employed to model the irradiation-induced defects, and the results show good agreement with experimental observations, further confirming the defect evolution and carrier dynamics under different TID levels. Furthermore, X-ray diffraction (XRD), photoluminescence (PL) spectroscopy, and X-ray photoelectron spectroscopy (XPS) were employed to analyze the microscopic structural changes and degradation mechanisms induced by TID irradiation. This work provides a theoretical foundation for the application of $\beta $ -Ga₂O₃ solar-blind photodetectors in extreme radiation environments.

This article focuses on investigating the total ionizing dose (TID) effects of $\beta $ -Ga $_{\text{2}}$ O $_{\text{3}}$ -based Schottky barrier diodes (SBDs). The TID degradation behavior and mechanisms are evaluated by varying irradiation bias conditions, conducted through dc, capacitance–voltage ( C – V ), and low-frequency noise (LFN) measurements. At a dose of 1 Mrad(Si), the irradiated devices demonstrate a noticeable increase in both forward and reverse currents. This increase is primarily attributed to the rise in defect concentration caused by ionizing damage resulting from TID effects. The TID degradation of $\beta $ -Ga $_\text{2}$ O $_{\text{3}}$ SBD is significantly influenced by bias conditions, with devices under high electric fields experiencing more severe degradation. Specifically, a high reverse electric field during radiation leads to a notable increase in interface defects of $\beta $ -Ga $_\text{2}$ O $_\text{3}$ SBDs, this result was validated through TCAD simulation. The reverse bias voltage exacerbates TID effects and reduces the radiation tolerance of $\beta $ -Ga $_\text{2}$ O $_\text{3}$ SBD devices.

This paper investigates the temperature-dependent effects of gamma-ray irradiation on β-Ga₂O₃ vertical Schottky barrier diodes (SBDs) under a 100 V reverse bias condition at a total dose of 1 Mrad(Si). As the irradiation dose increased, the radiation damage became more severe. The total ionizing dose (TID) degradation behavior and mechanisms were evaluated through DC, capacitance–voltage (C-V), and low-frequency noise (LFN) measurements by varying irradiation, and the test results indicated that TID effects introduced interface defects and altered the carrier concentration within the material. The impact of TID effects was more pronounced at lower temperatures compared to higher temperatures. Additionally, the annealing effect in the high-temperature experimental conditions ameliorated the growth of interface trap defects caused by irradiation. These results suggest that compared to low-temperature testing, the device exhibits higher TID tolerance after high-temperature exposure, providing valuable insights for in-depth radiation reliability studies on subsequent related devices.