Crystalline zinc tin oxide (ZTO; zinc oxide with heavy tin doping of 33 at.%) nanowires were first synthesized using the electrodeposition and heat treatment method based on an anodic aluminum oxide (AAO) membrane, which has an average diameter of about 60 nm. According to the field emission scanning electron microscopy (FE-SEM) results, the synthesized ZTO nanowires are highly ordered and have high wire packing densities. The length of ZTO nanowires is about 4 μm, and the aspect ratio is around 67. ZTO nanowires with a Zn/(Zn + Sn) atomic ratio of 0.67 (approximately 2/3) were observed from an energy dispersive spectrometer (EDS). X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrated that the ZTO nanowire is hexagonal single-crystalline. The study of ultraviolet/visible/near-infrared (UV/Vis/NIR) absorption showed that the ZTO nanowire is a wide-band semiconductor with a band gap energy of 3.7 eV.

Structural, transport, magnetic, calorimetric, and neutron data were reported for the oxygen-annealed ${\mathrm{Pr}}_{1+x}{\mathrm{Ba}}_{2-x}{\mathrm{Cu}}_3{\mathrm{O}}_{7+y}$ or 1212-type ${\mathrm{C}\mathrm{u}(\mathrm{B}\mathrm{a}}_{2-x}{\mathrm{Pr}}_x{)\mathrm{P}\mathrm{r}\mathrm{C}\mathrm{u}}_2{\mathrm{O}}_{7+y}$ system $(0\mathrm{}<~x<~1,$ $-0.11<~y<~0.31).$ Powder x-ray Rietveld analysis indicates that due to subtle oxygen distribution in the ${\mathrm{CuO}}_{1+y}$ plane for these oxygenated cuprates, two structural symmetry transitions were observed, from orthorhombic $1212C$ (CuO chain) O(I) phase (space group Pmmm) for $0<~x<~0.4,$ to tetragonal 1212 T phase $\mathrm{}(P4/mmm)\mathrm{}$ for $0.4<~x<~0.65,$ and then to a different type of orthorhombic 1212 O(II) phase (Cmmm) for $0.65<x<\mathrm{}1.\mathrm{}$ Resistivity data indicate that Pr-in-Ba is not favorable for metallic state and no superconductivity can be detected for these insulating cuprates. Magnetic-susceptibility, heat-capacity, and neutron-diffraction data show that, regardless of the structural transitions, the anomalous Néel temperature $T_N\mathrm{}\left(\mathrm{Pr}\right)\mathrm{}$ decreases monotonically and smoothly from 18 K for $x=0\mathrm{}$ to 2.5 K for $x=0.8,$ with the same c-axis antiferromagnetic Pr spin alignment. The increasing Pr-O bond length observed with decreasing $T_N\mathrm{}\left(\mathrm{Pr}\right)\mathrm{}$ indicates that this unusual Pr magnetic ordering is closely correlated with the wave-function overlap between $\mathrm{P}\mathrm{r}-4\mathrm{}f$ orbital and eight $\mathrm{O}-2\mathrm{}{p}_{\pi }$ orbital in the ${\mathrm{CuO}}_2$ bilayer.

Bi_0.8Pr_0.2Fe_0.95Mn_0.05O₃/Bi_3.96Gd_0.04Ti_2.95W_0.05O₁₂ (BPFMO/BGTWO) bilayer thin films with Multiferroic/Ferroelectric (MF/FE) structures were deposited onto Pt(111)/Ti/SiO₂/Si(100) substrates by using the sol-gel method with rapid thermal annealing. The BPFMO/BGTWO thin films exhibited well-saturated ferromagnetic and ferroelectric hysteresis loops because of the electro-magnetic coupling induced by the MF/FE structure. The remnant magnetization (2Mr) and remnant polarization (2Pr) were 4.6 emu/cm³ and 62 μC/cm², respectively. Moreover, the bipolar I-V switching curves of BPFMO/BGTWO bilayer thin films resistive random access memory (RRAM) devices were discussed, and investigated for LRS/HRS.