Indium oxide (In ₂ O ₃ ) nanowire field effect transistors (FETs) have great potential in electronic and sensor applications owing to their suitable band width and high electron mobility. However, the In ₂ O ₃ nanowire FETs reported previously were operated in a depletion-mode, not suitable to the integrated circuits result of the high-power consumption. Therefore, tuning the electrical properties of In ₂ O ₃ nanowire FETs into enhancement-mode is critical for the successful application in the fields of high-performance electronics, optoelectronics and detectors. In the work, a simple but effective strategy was carried out by preparing Ag nanoparticle functionalized In ₂ O ₃ NWs to regulate the threshold voltage (V _th ) of In ₂ O ₃ NW FETs, successfully achieving enhanced-mode devices. The threshold voltage can be regulated from −6.9 V to +7 V by controlling Ag density via deposition time. In addition, the devices exhibited high performance: huge I _on /I _off ratio > 10 ⁸ , large maximum saturation current ≈ 800 mA and excellent carrier mobility ≈ 129 cm ² Vċs ⁻¹ . The enhanced performance is attributed to the surface passivation by Ag nanoparticles to reduce the density of traps and the charge transfer between traps and the nanowires to regulate the V _th . The result indicates the application of metal nanoparticles significantly improve oxide NW for low-power FETs.

A layered Ti₃C₂T_x MXene structure was prepared by etching MAX-phase Ti₃AlC₂ with hydro-fluoric acid (HF), followed by alkalization in sodium hydroxide (NaOH) solutions of varying concentrations and for varying durations. Compared to sensors utilizing unalkalized Ti₃C₂T_x, those employing alkalized Ti₃C₂T_x MXene exhibited enhanced sensitivity for NH₃ detection at room temperature and a relative humidity of 40%. Both the concentration of NaOH and duration of alkalization significantly influenced sensor performance. Among the tested conditions, Ti₃C₂T_x MXene alkalized with a 5 M NaOH solution for 12 h exhibited optimal performance, with high response values of 100.3% and a rapid response/recovery time of 73 s and 38 s, respectively. The improved sensitivity of NH₃ detection can be attributed to the heightened NH₃ adsorption capability of oxygen-rich terminals obtained through the alkalization treatment. This is consistent with the observed increase in the ratio of oxygen to fluorine atoms on the surface terminations of the alkalization-treated Ti₃C₂T_x. These findings suggest that the gas-sensing characteristics of Ti₃C₂T_x MXene can be finely tuned and optimized through a carefully tailored alkalization process, offering a viable approach to realizing high-performance Ti₃C₂T_x MXene gas sensors, particularly for NH₃ sensing applications.

Copper (Cu), a kind of resourceful and low-cost transition metal has attracted a great deal of attention in recent years. Owing to the efficient catalytic activity of Cu nanoparticles (NPs),...

The failure proportion of insulated gate bipolar transistor (IGBT) owing to overheating is very high during operation; especially, it endures large transient currents when turned on. Therefore, the efficient thermal management of IGBT power devices is very important to the safety and reliability of the IGBT. Here, a finite element analysis is carried out to investigate the influence of a thermal interface material with paraffin as the phase change material and graphene as reinforced thermal conductive filler on the temperature and thermal resistance of IGBT modules. The simulation results show that the existence of paraffin phase change material can slow down the heating rate and decrease the interfacial thermal resistance of the IGBT module. At the optimal thickness of paraffin, [ ], the temperature of IGBT module is dropped by 13°C. The temperature of IGBT module is lowest for 5% wt mass fraction of graphene, and decreases by 6°C compared to that of 0% wt mass fraction of graphene. The composite thermal interface material can effectively enhance the heat dissipation of IGBT modules compared with commercial silicone grease. All the results demonstrate that the composite thermal interface material is very useful in heat dissipation practical applications for IGBT modules.

The branched hierarchical nanostructures have been widely studied for optoelectronics application due to their unique optical and electrical properties. Three-dimensional (3D) hierarchical branched Au-cadmium sulfide (CdS) nano-composite structures were successfully synthesized on Si substrate utilizing facile chemical vapor deposition (CVD) method combined with thermal evaporation method. Here, a simple in situ method combined with photolithography technology was carried out to investigate the photoluminescence (PL) 3D hierarchical branched CdS decorated with Au NPs. Compared with pure 3D hierarchical branched CdS, the PL emission of 3D hierarchical branched CdS decorated with Au NPs can be quenched and enhanced. The enhancement of the PL emission is attributed to the localized surface plasmons response (LSPR) of Au NPs, and the electrons transfer from Au NPs to CdS. While, the quenching is due to the light scattering of Au NPs, and the electrons transfer from CdS to Au NPs. The results can be used for in situ study of material properties, which is very important for the nano devices based on a single nanowire. And the results can also help to make clear the coupling mechanism of metal NPs and semiconductor. So, the PL emission quenching or enhancement of the metal NPs coupled with a semiconductor can be effectively controlled.