When depositing films on a complex workpiece surface by magnetron sputtering, the shadow effect occurs and causes the columnar structure to tilt toward the substrate owing to the oblique incident angle of the plasma flux, affecting the microstructure and properties of the films. Improving the surface diffusion could alleviate the shadow effect, whereas changing the energy of the deposited particles could improve surface diffusion. Different substrate conductivities could affect the energy of the deposited particles when they reach the substrate. In this study, Si (semiconductor) and SiO₂ (insulator) sheets are mounted on the inner surface of a hemispherical workpiece, and Ti films with different thicknesses (adjusted by the deposition time) are deposited on the inner surface of the hemispherical workpiece by direct current magnetron sputtering. The results show that there is a threshold thickness and incident angle before the films are affected by the shadow effect. The threshold could be affected by the film thickness, the incident angle, and the conductivity of the substrate. The threshold would decrease as the film thickness or incidence angle increased or the conductivity of the substrate decreased. When the film thickness or incident angle does not reach the threshold, the film would not be affected by the shadow effect. In addition, the film deposited later would tilt the vertical columnar structure of the film deposited earlier. Owing to the different conductivities, the shadow effect manifest earlier for Ti films deposited on the insulator SiO₂ than for films deposited on the semiconductor Si when the film thickness is >500 nm.

Titanium-copper (Ti–Cu) coatings have attracted extensive attention in the surface modification of industrial and biomedical materials due to their excellent physical and chemical properties and biocompatibility. Here, Ti–Cu coatings are fabricated using a combination of high-power pulsed magnetron sputtering (HPPMS; also known as high power impulse magnetron sputtering (HiPIMS)) and DC magnetron sputtering followed by vacuum annealing at varied temperatures (300, 400, and 500 °C). X-ray diffraction (XRD), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS) data showed that Ti, Cu, and CuTi₃ are mainly formed in the coatings before annealing, while Ti₃O, Cu₂O, and CuTi₃ are the main compounds present in the annealed coatings. The cross-sectional TEM micrographs and corresponding EDS results provided evidence that Ti is mainly present on the surface and interfaces of the silicon substrate and the Ti–Cu coatings annealed at 500 °C, while the bulk of the coatings is enriched with Cu. The resistivity of the coatings decreased with increasing the annealing temperature from 300 to 500 °C. Based on self-corrosion current density data, the Ti–Cu coating annealed at 300 °C showed similar corrosion performance compared to the as-deposited Ti–Cu coating, while the corrosion rate increased for the Ti–Cu coatings annealed at 400 and 500 °C. Stable release of copper ions in PBS (cumulative released concentration of 0.8–1.0 μM) for up to 30 days was achieved for all the annealed coatings. Altogether, the results demonstrate that vacuum annealing is a simple and viable approach to tune the Cu diffusion and microstructure of the Ti–Cu coatings, thereby modulating their electrical resistivity, corrosion performance, and Cu ion release behavior.

Titanium thin films are particularly important as electrode layers, barrier layers, or intermediate buffer layers in the semiconductor industry. In order to improve the quality of Ti thin films and the adhesion and diffraction abilities of irregular parts, this paper used high-power pulsed magnetron sputtering (HPPMS/HiPIMS) to prepare titanium thin films. The effects of different trigger voltages (700 V, 800 V, and 900 V) on plasma properties were studied, and the microstructure, mechanical properties and corrosion resistance of the films were also studied. The results showed that as the voltage increased, the grain size of the thin films gradually increased. The residual stress of the titanium films changed from compressive stress (−333 MPa) to tensile stress (55 MPa) and then to low compressive stress (−178 MPa). The hardness values were 13 GPa, 9.45 GPa and 6.62 GPa, respectively. The wear resistance of the films gradually decreased, while the toughness gradually increased. The corrosion resistance of the films decreased as well.

The (TiNbZrCr)N_x high-entropy nitride films (HENFs) were prepared by high-power pulsed magnetron sputtering (HPPMS). The effect of the N₂ flow rate (F_N) on the HPPMS plasma discharge, film composition, microstructure, residual stress, tribological properties, and corrosion resistance was investigated. Results show that, with the increase in F_N, plasma discharge is enhanced. Firstly, the introduced N atoms react with Ti, Nb, Cr, and Zr to form an FCC nitride phase structure. Then, with the increase in plasma bombardment on the deposited film, the HENFs undergo amorphization to form an FCC+ amorphous structure, accompanied by a decrease in grain size and a change in the preferred orientation from (1 1 1) to (2 0 0). The HENFs deposited at F_N = 8 sccm show the highest hardness of 27.8 GPa. The HENFs deposited at F_N = 12 sccm present the best tribological properties, with a low wear rate of 4.0 × 10⁻⁶ mm³N⁻¹m⁻¹. The corrosion resistance of the (TiNbZrCr)N_x HENFs shows a strong correlation with the amorphous phase. The corrosion resistance of the FCC nitride film is the worst, and the corrosion resistance gradually increases with the amorphous transformation of the film. Based on the above results, nanocomposite high-entropy films can be prepared using HPPMS technology and exhibit excellent, comprehensive performance.