When depositing films on a complex workpiece surface by magnetron sputtering, the shadow effect occurs and causes the columnar structure to tilt toward the substrate owing to the oblique incident angle of the plasma flux, affecting the microstructure and properties of the films. Improving the surface diffusion could alleviate the shadow effect, whereas changing the energy of the deposited particles could improve surface diffusion. Different substrate conductivities could affect the energy of the deposited particles when they reach the substrate. In this study, Si (semiconductor) and SiO₂ (insulator) sheets are mounted on the inner surface of a hemispherical workpiece, and Ti films with different thicknesses (adjusted by the deposition time) are deposited on the inner surface of the hemispherical workpiece by direct current magnetron sputtering. The results show that there is a threshold thickness and incident angle before the films are affected by the shadow effect. The threshold could be affected by the film thickness, the incident angle, and the conductivity of the substrate. The threshold would decrease as the film thickness or incidence angle increased or the conductivity of the substrate decreased. When the film thickness or incident angle does not reach the threshold, the film would not be affected by the shadow effect. In addition, the film deposited later would tilt the vertical columnar structure of the film deposited earlier. Owing to the different conductivities, the shadow effect manifest earlier for Ti films deposited on the insulator SiO₂ than for films deposited on the semiconductor Si when the film thickness is >500 nm.

To investigate the effect of B₄C particle size on the microstructure and mechanical properties of B₄C/Al composites, and to provide theoretical guidance for the subsequent thermal processing of composites, B₄C/Al composites with varying B₄C particle sizes (0.2 µm, 0.5 µm, 1 µm, 10 µm) were fabricated using pressureless infiltration. The microstructure of the composites was characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM), while the mechanical properties were analyzed by hardness test, three-point bending and high temperature compression. The results indicated that Al₃BC and AlB₂ were the primary interfacial reaction products in B₄C/Al composites, and interface reaction could be alleviated with increasing particle size. B₄C/Al composites with larger B₄C particle sizes exhibited a relatively uniform and discrete distribution of B₄C, while those with smaller B₄C particle sizes showed agglomeration of B₄C. The Vickers hardness and peak flow stress of B₄C/Al composites gradually decreased with the increase of B₄C particle size, while the bending strength, flexural modulus, and fracture toughness tended to increase. In addition, when B₄C particle size was 10 µm, the composites displayed optimal comprehensive performance with the lowest peak flow stress (150 MPa) and the highest fracture toughness (12.75 MPa·m^1/2).

Titanium-copper (Ti–Cu) coatings have attracted extensive attention in the surface modification of industrial and biomedical materials due to their excellent physical and chemical properties and biocompatibility. Here, Ti–Cu coatings are fabricated using a combination of high-power pulsed magnetron sputtering (HPPMS; also known as high power impulse magnetron sputtering (HiPIMS)) and DC magnetron sputtering followed by vacuum annealing at varied temperatures (300, 400, and 500 °C). X-ray diffraction (XRD), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS) data showed that Ti, Cu, and CuTi₃ are mainly formed in the coatings before annealing, while Ti₃O, Cu₂O, and CuTi₃ are the main compounds present in the annealed coatings. The cross-sectional TEM micrographs and corresponding EDS results provided evidence that Ti is mainly present on the surface and interfaces of the silicon substrate and the Ti–Cu coatings annealed at 500 °C, while the bulk of the coatings is enriched with Cu. The resistivity of the coatings decreased with increasing the annealing temperature from 300 to 500 °C. Based on self-corrosion current density data, the Ti–Cu coating annealed at 300 °C showed similar corrosion performance compared to the as-deposited Ti–Cu coating, while the corrosion rate increased for the Ti–Cu coatings annealed at 400 and 500 °C. Stable release of copper ions in PBS (cumulative released concentration of 0.8–1.0 μM) for up to 30 days was achieved for all the annealed coatings. Altogether, the results demonstrate that vacuum annealing is a simple and viable approach to tune the Cu diffusion and microstructure of the Ti–Cu coatings, thereby modulating their electrical resistivity, corrosion performance, and Cu ion release behavior.

Titanium nitride (Ti-N) thin films are electrically and thermally conductive and have high hardness and corrosion resistance. Dense and defect-free Ti-N thin films have been widely used in the surface modification of cutting tools, wear resistance components, medical implantation devices, and microelectronics. In this study, Ti-N thin films were deposited by high power pulsed magnetron sputtering (HPPMS) and their plasma characteristics were analyzed. The ion energy of Ti species was varied by adjusting the substrate bias voltage, and its effect on the microstructure, residual stress, and adhesion of the thin films were studied. The results show that after the introduction of nitrogen gas, a Ti-N compound layer was formed on the surface of the Ti target, which resulted in an increase in the Ti target discharge peak power. In addition, the total flux of the Ti species decreased, and the ratio of the Ti ions increased. The Ti-N thin film deposited by HPPMS was dense and defect-free. When the energy of the Ti ions was increased, the grain size and surface roughness of the Ti-N film decreased, the residual stress increased, and the adhesion strength of the Ti-N thin film decreased.

Titanium thin films are particularly important as electrode layers, barrier layers, or intermediate buffer layers in the semiconductor industry. In order to improve the quality of Ti thin films and the adhesion and diffraction abilities of irregular parts, this paper used high-power pulsed magnetron sputtering (HPPMS/HiPIMS) to prepare titanium thin films. The effects of different trigger voltages (700 V, 800 V, and 900 V) on plasma properties were studied, and the microstructure, mechanical properties and corrosion resistance of the films were also studied. The results showed that as the voltage increased, the grain size of the thin films gradually increased. The residual stress of the titanium films changed from compressive stress (−333 MPa) to tensile stress (55 MPa) and then to low compressive stress (−178 MPa). The hardness values were 13 GPa, 9.45 GPa and 6.62 GPa, respectively. The wear resistance of the films gradually decreased, while the toughness gradually increased. The corrosion resistance of the films decreased as well.

In this study, TiN films doped with different copper contents (TiCuN) were prepared by using direct current magnetron sputtering method. The effects of Cu doping on composition, structure, and mechanical properties of TiN films were studied by energy-dispersive spectroscopy (EDS), X-ray diffraction (XRD), a Vickers microhardnessmeter, and density functional theory (DFT). The results of experimental and DFT study showed that Cu mainly replaced Ti atoms in TiN to form replacement solid solution doping. When Cu replaced Ti in TiN, a weak Cu-N (bond population varied from 0.06 to 0.11) covalent bond formed; meanwhile, the bonding strength of Ti-N (bond population varied from 0.29 to 0.4) bond adjacent to Cu increased. When Cu content was low, a small number of weak Cu-N bonds were formed, with strengthened Ti-N bond near Cu atom, resulting in an increased hardness of Cu doped TiN films. According to the theory of weak bonds, when the Cu content was increased further, the number of weak Cu-N bonds increased and TiCuN hardness decreased. With an increase in Cu content, it was found the toughness of TiCuN also increased. The results of this study will provide a theoretical and experimental guidance for improving the toughness and deformation resistance of TiN, which has a potential application in the surface modification of medical devices.