Titanium thin films are particularly important as electrode layers, barrier layers, or intermediate buffer layers in the semiconductor industry. In order to improve the quality of Ti thin films and the adhesion and diffraction abilities of irregular parts, this paper used high-power pulsed magnetron sputtering (HPPMS/HiPIMS) to prepare titanium thin films. The effects of different trigger voltages (700 V, 800 V, and 900 V) on plasma properties were studied, and the microstructure, mechanical properties and corrosion resistance of the films were also studied. The results showed that as the voltage increased, the grain size of the thin films gradually increased. The residual stress of the titanium films changed from compressive stress (−333 MPa) to tensile stress (55 MPa) and then to low compressive stress (−178 MPa). The hardness values were 13 GPa, 9.45 GPa and 6.62 GPa, respectively. The wear resistance of the films gradually decreased, while the toughness gradually increased. The corrosion resistance of the films decreased as well.

High-power impulse magnetron sputtering (HiPIMS) technology was used to deposit Ti-Nb-Cr films on Si (100) and 316L substrates by changing the peak power of the Ti-Nb-Cr target. Optical emission spectroscopy (OES) was used to study the effect of peak power on the ion atomic arrival ratio in front of the substrate. Experimental instruments such as an X-ray diffraction (XRD) device, scanning electron microscope (SEM), transmission electron microscope (TEM), nanohardness tester, ball-disk reciprocating friction machine, and electrochemical workstation were used to study the effects of the atomic arrival ratio of Ti, Nb, and Cr ions on the microstructure, mechanical properties, and corrosion resistance of Ti-Nb-Cr films. The results show that when the peak power is 67.84 kW, the ion atomic arrival ratio of Ti reaches 47.57%, the ion atomic arrival ratio of Nb reaches 39.41%, and the ion atomic arrival ratio of Cr reaches 10.6%. The ion atomic arrival ratio is doubled compared to the peak power of 51.04 kW. The films prepared at different peak powers all show diffraction peaks of the BCC structure. At high power levels, the TiNbCr films exhibit reduced residual compressive stress, although this may be accompanied by lower hardness and wear resistance.