Organic thin-film transistors have been fabricated using laser-induced forward transfer as spatially resolved laser-printing method. Using this technique, source and drain electrodes were deposited from silver nanoparticle ink and the copper phthalocyanine (CuPc) was used to form the active layer. Both kinds of materials were transferred from a donor substrate onto a receiver substrate upon irradiation with laser pulses in the picosecond regime. The latter substrate formed the gate and the dielectric of the transistor. Electrical characterizations showed that the transistors are fully operative, showing well-defined linear and saturation regimes in the I-V curves.

Photostability of organic photovoltaic devices represents a key requirement for the commercialization of this technology. In this field, ZnO is one of the most attractive materials employed as an electron transport layer, and the investigation of its photostability is of particular interest. Indeed, oxygen is known to chemisorb on ZnO and can be released upon UV illumination. Therefore, a deep analysis of the UV/oxygen effects on working devices is relevant for the industrial production where the coating processes take place in air and oxygen/ZnO contact cannot be avoided. Here we investigate the light-soaking stability of inverted organic solar cells in which four different solution-processed ZnO-based nanoparticles were used as electron transport layers: (i) pristine ZnO, (ii) 0.03 at %, (iii) 0.37 at %, and (iv) 0.8 at % aluminum-doped AZO nanoparticles. The degradation of solar cells under prolonged illumination (40 h under 1 sun), in which the ZnO/AZO layers were processed in air or inert atmosphere, is studied. We demonstrate that the presence of oxygen during the ZnO/AZO processing is crucial for the photostability of the resulting solar cell. While devices based on undoped ZnO were particularly affected by degradation, we found that using AZO nanoparticles the losses in performance, due to the presence of oxygen, were partially or totally prevented depending on the Al doping level.