To improve the material removal efficiency and surface quality of single-crystal silicon after magnetorheological finishing, a novel green chemical-mechanical magnetorheological finishing (CMMRF) fluid was developed. The main components of the CMMRF fluid are nano-Fe₃O₄, H₂O₂, CH₃COOH, nanodiamond, carbonyl iron powder, and deionized water. The novel CMMRF fluid can simultaneously achieve Ra 0.32 nm (0.47 mm × 0.35 mm measurement area), Ra 0.22 nm (5 μm × 5 μm measurement area), and 1.91 × 10⁻² mm³/min material removal efficiency. Comprehensive studies utilizing a scanning electron microscope and a magnetic rheometer show that the CMMRF fluid has a high mechanical removal effect due to the well-dispersed nanodiamond and nano-Fe₃O₄ particles. The results of Fourier transform infrared spectra and Young’s modulus test reveal the mechanism of the chemical reaction and the mechanical characteristics deterioration of the modified layer. Under co-enhanced chemical and mechanical effects, an ultra-smooth and highly efficient MRF technology for single-crystal silicon is realized.

The mechanism of the combined process of ion beam sputtering (IBS) and HF acid etching on the chemical structure defects of fused silica and its laser damage resistance performance were investigated in this paper. During the removal process of surface material, the sputtering effect causes lattice atoms to flee their native space locations, and a large amount of unsaturated chemical structures are produced on the silica surface, which improves the chemical activity of Si and O atoms, accelerates the chemical reaction process between surface atoms and water molecules, increases the content of hydroxyl groups (OH-) in the shallow layer, and enhances the photothermal weak absorption intensity. However, the increase in hydroxyl content weakens the binding strength of silicon–oxygen bonds, destroys the spatial network structure of silica bulk, and reduces its mechanical strength, resulting in a decrease in its laser damage resistance performance. The paper reveals for the first time the mechanism by which IBS changes the structure characteristics of silica material, accelerates the surface hydroxylation process, and thereby reduces the laser damage resistance performance. This work provides technical guidance for effectively suppressing chemical structure defects on silica surfaces and improving the laser damage resistance performance of optical components under high-flux laser irradiation.

In this paper, the mechanism of combined process of ion beam sputtering (IBS) and HF acid etching on the chemical structure defects of fused silica and its laser damage resistance perfor-mance were investigated. During the removal process of surface material, the sputtering effect causes lattice atoms to detach from their original positions, forming a large number of unsaturated structures on silica surface, which improves the chemical activity of Si and O atoms, accelerates the chemical reaction process between surface atoms and water molecules, increases the content of hydroxyl (OH-) groups in the shallow layer, and enhances the photothermal weak absorption intensity. However, the presence of OH- groups reduces the bonding strength of Si-O, destroys the spatial network structure of silica bulk, and reduces the mechanical strength of silica surface, resulting in a decrease in its laser damage resistance performance. The paper reveals for the first time the mechanism of IBS to change the structure characteristics of silica material, accelerate the surface hydroxylation process, and thereby reduces the laser damage resistance performance. This work provides technical guidance for effectively suppressing chemical structure defects on silica surface and improving laser damage resistance performance of optical components under high-flux laser irradiation.