Currently, the most common method of silane synthesis for electronics and photovoltaics is trichlorosilane dismutation. Therefore, an experimental study of the kinetics of the dismutation reaction of chlorosilanes is of scientific and practical interest. A catalyst has been proposed that allows the dismutation reaction to be carried out in a wide range of temperatures and pressures. Both kinetic and thermodynamic data on the dependence of the rate of the dismutation reactions of trichlorosilane, dichlorosilane, and monochlorosilane on pressure were experimentally obtained. In addition, the dependence of saturated vapor pressure on temperature for monochlorosilane and dichlorosilane were also experimentally determined. Using the example of TCS, it was experimentally established that increasing the pressure to six atmospheres makes it possible to increase the specific productivity of the reactor by at least an order of magnitude due to the acceleration of the chemical reaction and the increase in the molar concentration of chlorosilanes in the vapor mixture. Consequently, it becomes possible to multiply the reactor’s load on the substance and, accordingly, the performance of the chlorosilane dismutation apparatus in general.