The processes of hydrogen reduction of silicon and germanium chlorides under the conditions of high-frequency (40.68 MHz) counteracted arc discharge stabilized between two rod electrodes are investigated. The main gas-phase and solid products of plasma-chemical transformations are determined. Thermodynamic analysis of SiCl₄ + H₂ and GeCl₄ + H₂ systems for optimal process parameters was carried out. Using the example of hydrogen reduction of SiCl₄ by the method of numerical modeling, gas-dynamic and thermal processes for this type of discharge are investigated. The impurity composition of gas-phase and solid reaction products is investigated. The possibility of single-stage production of high-purity Si and Ge mainly in the form of compact ingots, as well as high-purity chlorosilanes and trichlorogermane, is shown.

The processes of hydrogen reduction of silicon and germanium chlorides under the conditions of high-frequency (40.68 MHz) counteracted arc discharge stabilized between two rod electrodes are investigated. The main gas-phase and solid products of plasma-chemical transformations are determined. Thermodynamic analysis of SiCl4 + H2 and GeCl4 + H2 systems for optimal process parameters was carried out. Using the example of hydrogen reduction of SiCl4 by the method of numerical modeling, gas-dynamic and thermal processes for this type of discharge are investigated. The impurity composition of gas-phase and solid reaction products is investigated. The possibility of single-stage production of high-purity Si and Ge mainly in the form of compact ingots, as well as high-purity chlorosilanes and trichlorogermane, is shown.

Currently, the most common method of silane synthesis for electronics and photovoltaics is trichlorosilane dismutation. Therefore, an experimental study of the kinetics of the dismutation reaction of chlorosilanes is of scientific and practical interest. A catalyst has been proposed that allows the dismutation reaction to be carried out in a wide range of temperatures and pressures. Both kinetic and thermodynamic data on the dependence of the rate of the dismutation reactions of trichlorosilane, dichlorosilane, and monochlorosilane on pressure were experimentally obtained. In addition, the dependence of saturated vapor pressure on temperature for monochlorosilane and dichlorosilane were also experimentally determined. Using the example of TCS, it was experimentally established that increasing the pressure to six atmospheres makes it possible to increase the specific productivity of the reactor by at least an order of magnitude due to the acceleration of the chemical reaction and the increase in the molar concentration of chlorosilanes in the vapor mixture. Consequently, it becomes possible to multiply the reactor’s load on the substance and, accordingly, the performance of the chlorosilane dismutation apparatus in general.

The processes of hydrogen reduction of silicon and germanium chlorides under the conditions of radio-frequency (40.68 MHz) counteracted arc discharge stabilized between two rod electrodes were investigated. The main gas-phase and solid products of plasma-chemical transformations were determined. Thermodynamic analysis of SiCl4 + H2 and GeCl4 + H2 systems was carried out. It is shown that under the implemented experimental conditions, equilibrium components of the products are established. The detected spectra of chemical activity were studied, which gave reason to assume that the molecular mechanism of the hydrogen reduction process is the main one. The impurity composition of gas-phase and solid reaction products was investigated. The possibility of single-stage production of high-purity Si and Ge mainly in the form of compact ingots, as well as high-purity chlorosilanes and trichlorogermane, was shown.