In this study, electromigration (EM) of interconnects (90 nm pitch) with airgaps was investigated using a combination of computational mechanics, analytical modelling, and EM experiments. EM experiments reveal that airgapped Cu lines without dielectric liner (non-capsulated) fail early by voiding in the EM tests due to oxidation and deterioration of interfacial adhesion at Cu interfaces. Also at high temperature regimes, extrusive failures under thermal compressive stresses were observed in airgapped Cu lines without dielectric liner. Therefore, Cu encapsulation using a conformal dielectric liner of adequate thickness is necessary in order to ensure hermeticity and provide endurance to the thermal and EM induced extrusive stresses. For an airgapped interconnect with a hermetic 5 nm PECVD conformal carbon doped silicon nitride (SiCN) liner deposited at 370 °C, a (jL)crit comparable to that of non-airgapped interconnects (with ultra-low-k dielectric 2.5 inter-layer dielectric) was predicted by the simulations. The process-oriented simulations reveal, however, that the tensile stress in Cu lines increases linearly with the thickness of the SiCN liner. Therefore, increasing the thickness of the dielectric liner beyond the minimum thickness required for hermeticity was found to impact the critical line length (jL)crit adversely.

Sylgard((R)) is a biocompatible elastomer which has been widely used in biomedical applications including in simulations of the mechanical response of soft tissues and mechanotransduction investigations. In this study the effect of fabrication parameters including base to curing agent ratio and curing time on the mechanical response of Sylgard((R)) was investigated and a novel fabrication technique for the production of mock arteries with highly uniform thickness, which is essential for mechanotransduction studies, is described. Finally a method for the surface treatment of Sylgard((R)) using sulphuric acid and fibronectin to enhance smooth muscle cell (SMC) adhesion is proposed and examined in vitro. Sylgard((R)) mock coronary arteries fabricated using the proposed technique exhibited a mechanical response close to arterial tissue with cell adhesion enhanced using the surface treatment techniques described.

This paper demonstrates the direct observation of crack initiation, crack propagation, and interfacial delamination events during in-situ microbeam bending tests of FIB milled BEOL structures. The elastic modulus and the critical force of fracture of the BEOL beam samples were compared for beams of different length and width.

A comprehensive physics-based modeling framework for electromigration (EM) in copper nano-interconnects is presented. It combines the three stages of stress evolution, void nucleation, and void dynamics in a single fully coupled and consolidated platform. Mechanical stress evolution, pre- and post-void nucleation, and its impact on void dynamics are deciphered, which enables accurate predictions of EM aging processes as validated by dedicated EM experiments. Subsequently, the experimentally validated model is utilized to shed light on the impact of a number of manufacturing variables, namely, line extension, via taper angle, and the effectiveness of the via bottom flux divergence point. A linear correlation between the ion leakage through the via bottom barrier and the peak tensile stress at the cathode was observed in long lines. In short lines, a blocked cathode end with atomic leakage through the anode end weakens the back-stress effect and threatens the Blech effect induced interconnect immortality. Increasing the line extension length was shown to increase the EM lifetime by about 40%. This impact was saturated beyond 1 critical dimension of line extension. On the other hand, the via taper angle increased the upstream EM lifetime by about twofold when the taper angle was increased from 0° to 30°, which indicates that the change of via taper angle has a stronger impact on EM lifetime compared to the line extension.

As electronic devices continue to shrink in size and increase in complexity, the current densities in interconnects drastically increase, intensifying the effects of electromigration (EM). This renders the understanding of EM crucial, due to its significant implications for device reliability and longevity. This paper presents a comprehensive simulation framework for the investigation of EM in nano-interconnects, with a primary focus on unravelling the influential role of microstructure, by considering the impact of diffusion heterogeneity through the metal texture and interfaces. As such, the resulting atomic flux and stress distribution within nano-interconnects could be investigated. To this end, a novel approach to generate microstructures of the conductor metal is presented, whereby a predefined statistical distribution of grain sizes obtained from experimental texture analyses can be incorporated into the presented model, making the model predictive under various scales and working conditions with no need for continuous calibration. Additionally, the study advances beyond the state-of-the-art by comprehensively simulating all stages of electromigration including stress evolution, void nucleation, and void dynamics. The model was employed to study the impact of trench dimensions on the dual damascene copper texture and its impact on electromigration aging, where the model findings were corroborated by comparing them to the available experimental findings. A nearly linear increase in normalized time to nucleation was detected as the interconnect became wider with a fixed height for aspect ratios beyond 1. However, a saturation was detected with a further increase in width for lines of aspect ratios below 1, with no effective enhancement in time to nucleation. An aspect ratio of 1 seems to maximize the EM lifetime for a fixed cross-sectional area by fostering a bamboo-like structure, where about a 2-fold of increase was estimated when going from aspect ratio 2 to 1.