We directly detect the coherent electromagnetic radiation originating from Bloch oscillations of charge carriers in an electrically biased semiconductor superlattice structure. The oscillation frequency can be tuned with the applied bias field from 0.5 THz to more than 2 THz, the detection limit of our measurement system.

Intense radiation in the terahertz (THz) frequency range can be generated by focusing of an ultrashort laser pulse composed of both a fundamental wave and its second-harmonic field into air, as reported previously by Cook et al. [Opt. Lett. 25, 1210 (2000)]. We identify a threshold for THz generation that proves that generation of a plasma is required and that the nonlinearity of air is insufficient to explain our measurements. An additional THz field component generated in the type I $\beta$-barium borate crystal used for second-harmonic generation has to be considered if one is to avoid misinterpretation of this kind of experiment. We conclude with a comparison that shows that the plasma emitter is competitive with other state-of-the-art THz emitters.

We directly observe the electromagnetic radiation emitted by electrons coherently oscillating between the two wells of a semiconductor coupled-quantum-well structure. Using time-resolved coherent detection of the submillimeter-wave radiation from these spatial charge oscillations, we trace up to fourteen oscillations at 1.5 THz before phase relaxation destroys the coherence of the oscillating wave packet. In addition to the oscillatory electromagnetic signal, we also observe an instantaneous signal from electric-field-induced optical rectification in the semiconductor structure.

A focal-plane array (FPA) for room-temperature detection of 0.65-THz radiation has been fully integrated in a low-cost 0.25 mum CMOS process technology. The circuit architecture is based on the principle of distributed resistive self-mixing and facilitates broadband direct detection well beyond the cutoff frequency of the technology. The 3 timesZ 5 pixel array consists of differential on-chip patch antennas, NMOS direct detectors, and integrated 43-dB voltage amplifiers. At 0.65 THz the FPA achieves a responsivity (Rv) of 80 kV/W and a noise equivalent power (NEP) of 300 pW/ radic{Hz}. Active multi-pixel imaging of postal envelopes demonstrates the FPAs potential for future cost-effective terahertz imaging solutions.

In search of novel detectors of electromagnetic radiation at terahertz frequencies, field-effect transistors (FETs) have recently gained much attention. The current literature studies them with respect to the excitation of plasma waves in the two-dimensional channel. Circuit aspects have been taken into account only to a limited degree. In this paper, we focus on embedding silicon FETs in a proper circuitry to optimize their responsivity to terahertz radiation. This includes impedance-matched antenna coupling and amplification of the rectified signal. Special attention is given to the investigation of high-frequency short-circuiting of the gate and drain contacts by a capacitive shunt, a common approach of high-frequency electronics to induce resistive mixing in transistors. We theoretically study the effect of shunting in the framework of the Dyakonov–Shur plasma-wave theory, with the following key results. In the quasistatic limit, the capacitive shunt induces the longitudinal high-frequency field needed in the FET’s channel for resistive mixing. In the non-quasi-static case, the shunt’s role is taken over by plasma waves. Rectification can then be described as distributed self-mixing in the transistor’s channel. Based on such considerations as well as other circuit-related aspects, we arrive at a rational design for FET-based detectors of terahertz radiation, and implement the first monolithically integrated 0.65 THz focal-plane array including antennas and amplifiers on a single silicon die. The measured performance data compare well with the theoretical predictions.