We report on a promising approach for the label-free analysis of DNA molecules using direct probing of the binding state of DNA with electromagnetic waves at THz frequencies. Passive THz resonator devices based on planar waveguides are used as sample carriers and transducers for THz transmission analysis. In comparison to a formerly used free-space detection scheme, this method provides a drastically enhanced sensitivity enabling analysis down to femtomol levels. We examine the potential of our approach on biologically relevant DNA samples and demonstrate the detection of single base mutations on DNA molecules.

We present a promising approach for the label-free characterization of genetic material. Time-resolved terahertz (THz) transmission analysis of polynucleotides demonstrate a strong dependence of the complex refractive index on the binding state (hybridized/denatured) of deoxyribonucleic acid (DNA) molecules. By monitoring THz transients, one can thus infer the binding state of oligo- and polynucleotides, and hence identify polynucleotides by detecting the binding of unknown polynucleotide DNA sequences to known probe molecules. A broadband experimental demonstration in a free-space configuration, as well as a discussion of the potential application for next generation gene chips is presented.

In search of novel detectors of electromagnetic radiation at terahertz frequencies, field-effect transistors (FETs) have recently gained much attention. The current literature studies them with respect to the excitation of plasma waves in the two-dimensional channel. Circuit aspects have been taken into account only to a limited degree. In this paper, we focus on embedding silicon FETs in a proper circuitry to optimize their responsivity to terahertz radiation. This includes impedance-matched antenna coupling and amplification of the rectified signal. Special attention is given to the investigation of high-frequency short-circuiting of the gate and drain contacts by a capacitive shunt, a common approach of high-frequency electronics to induce resistive mixing in transistors. We theoretically study the effect of shunting in the framework of the Dyakonov–Shur plasma-wave theory, with the following key results. In the quasistatic limit, the capacitive shunt induces the longitudinal high-frequency field needed in the FET’s channel for resistive mixing. In the non-quasi-static case, the shunt’s role is taken over by plasma waves. Rectification can then be described as distributed self-mixing in the transistor’s channel. Based on such considerations as well as other circuit-related aspects, we arrive at a rational design for FET-based detectors of terahertz radiation, and implement the first monolithically integrated 0.65 THz focal-plane array including antennas and amplifiers on a single silicon die. The measured performance data compare well with the theoretical predictions.

An apporach for the sensing of small amounts of chemical and biochemical material is presented. A frequency selective surface made from asymmetric split ring resonators is excited with free space radiation. Due to interference effects a resonance occurs with a steep flank in the frequency response which is shifted upon dielectric loading. Utilizing a strong E-field concentration by selective loading the detection of very small amounts of probe material becomes possible. The functionality is proven by numerical simulation and the optimization of structure and loading is performed.

The development of ultrahigh-quality-factor $\left(Q\right)$ silicon-on-insulator (SOI) microring resonators based on silicon wire waveguides is presented. An analytical description is derived, illustrating that in addition to low propagation losses the critical coupling condition is essential for optimizing device characteristics. Propagation losses as low as $1.9\pm 0.1 \mathrm{dB}/\mathrm{cm}$ in a curved waveguide with a bending radius of $20 \mathit{\mu }\mathrm{m}$ and a $Q$ factor as high as $139.000\pm 6.000$ are demonstrated. These are believed to be the highest values reported for a curved SOI waveguide device and for any directly structured semiconductor microring fabricated without additional melting-induced surface smoothing.