In advanced computing technologies, metal oxide-based resistive switching random access memory (RRAM) has been considered an excellent scientific research interest in the areas of information storage and memory computing. Herein, we described a summary of contemporary understanding of nanoscale RRAM devices, and classified them according to their current–voltage (I–V) behavior, and various resistive switching features and corresponding parameters are also discussed. The existence of resistive switching effects with other experimental influential parameters explains better RRAM operation. Therefore, this review covers the abilities of RRAM to be integrated into the most sophisticated complementary-metal-oxide–semiconductor integrated circuits under additional consideration with relevant selector parameters to execute the operation. Additionally, we explained the route of changing the interface barrier height regarding the interface-based systems, such as inserting the tunnel layer and using different electrodes. Our findings show that by changing the specific parameters, the switching mechanism can be switched from one mode to another, which helps scientists assess the actual effectiveness and impact of resistive switching research on technology development.

Infrared photodetectors are gaining remarkable interest due to their widespread civil and military applications. Low-dimensional materials such as quantum dots, nanowires, and two-dimensional nanolayers are extensively employed for detecting ultraviolet to infrared lights. Moreover, in conjunction with plasmonic nanostructures and plasmonic waveguides, they exhibit appealing performance for practical applications, including sub-wavelength photon confinement, high response time, and functionalities. In this review, we have discussed recent advances and challenges in the prospective infrared photodetectors fabricated by low-dimensional nanostructured materials. In general, this review systematically summarizes the state-of-the-art device architectures, major developments, and future trends in infrared photodetection.

Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its high reflectance and band gap limit. In this study, two-step process, deep reactive ion etching (DRIE) method combined with plasma immersion ion implantation (PIII), are used to fabricate microstructured black silicon on the surface of C-Si. These improved surfaces doped with sulfur elements realize a narrower band gap and an enhancement of light absorptance, especially in the near-infrared range (800 to 2000 nm). Meanwhile, the maximum light absorptance increases significantly up to 83%. A Si-PIN photoelectronic detector with microstructured black silicon at the back surface exhibits remarkable device performance, leading to a responsivity of 0.53 A/W at 1060 nm. This novel microstructured black silicon, combining narrow band gap characteristic, could have a potential application in near-infrared photoelectronic detection.