ZnO nanomaterials and nanoparticles are a burgeoning field of research and a rapidly expanding technological sector in a wide variety of application domains.

This paper addresses the effect of Mn (2%, fixed) and Co (2, 4, and 6%, varied) substitution on the structural, optical, dielectric and magnetic responses of ZnO nanoparticles synthesized by the co-precipitation chemical route. The X-ray diffraction analysis confirms the hexagonal wurtzite structure of ZnO. The incorporation of co-doping in the ZnO host, indicated by peak shifting in the XRD patterns, enhanced the crystallite size of the Mn/Co dual-doped ZnO nanoparticles. The FTIR spectra show a characteristic peak around 875 cm⁻¹ assigned to Zn–O stretching, this validates the formation of the wurtzite structure of ZnO. Raman spectroscopy reveals the characteristic band of the wurtzite structure of ZnO nanoparticles along with coupled vibration modes of Mn/Co with the donor defect states in the doped samples. Enhanced optical absorption in the visible region and a significant red-shift in the absorption band edge were found due to doping. The optical band gap is found to decrease from 3.45 eV to 3.15 eV when Co doping increases up to 6%. The dielectric properties, strongly frequency-dependent, decrease with increasing Co doping while the electrical conductivity increases. Ferromagnetism is observed in all the doped samples, and its origin is attributed to an increase in oxygen vacancies which form bound magnetic polarons. It can be inferred that the doping of Mn and Co can be an effective tool to tune the physical properties of ZnO nanoparticles for potential spintronics and high-frequency applications.

Herein, the optoelectronic, structural, thermoelectric, and elastic characteristics of M ₂ LiCeF ₆ (M = Rb and Cs) double perovskite compounds were investigated using ab initio modeling in the DFT framework.

In advanced computing technologies, metal oxide-based resistive switching random access memory (RRAM) has been considered an excellent scientific research interest in the areas of information storage and memory computing. Herein, we described a summary of contemporary understanding of nanoscale RRAM devices, and classified them according to their current–voltage (I–V) behavior, and various resistive switching features and corresponding parameters are also discussed. The existence of resistive switching effects with other experimental influential parameters explains better RRAM operation. Therefore, this review covers the abilities of RRAM to be integrated into the most sophisticated complementary-metal-oxide–semiconductor integrated circuits under additional consideration with relevant selector parameters to execute the operation. Additionally, we explained the route of changing the interface barrier height regarding the interface-based systems, such as inserting the tunnel layer and using different electrodes. Our findings show that by changing the specific parameters, the switching mechanism can be switched from one mode to another, which helps scientists assess the actual effectiveness and impact of resistive switching research on technology development.