The $N{$\Lambda${}}_{c}$ and $N{$\Lambda${}}_{b}$ systems with $I=\frac{1}{2}$ and ${J}^{P}={0}^{+}$ or ${1}^{+}$ are investigated within the framework of the quark delocalization color screening model (QDCSM) by solving a resonating group method equation. The results show that the interaction between $N$ and ${$\Lambda${}}_{c}$ is attractive, but it is not strong enough to form any $N{$\Lambda${}}_{c}$ bound state, even with the help of channel coupling. Whereas the attraction between $N$ and ${$\Sigma${}}_{c}$ is strong enough to form a bound state $N{$\Sigma${}}_{c}{(}^{3}{S}_{1})$, it becomes a resonance state with the resonance mass of 3389\char21{}3404 MeV by coupling to the open $N{$\Lambda${}}_{c}$ $D$-wave channel. However it does not show up in the $N{$\Lambda${}}_{c}$ $S$-wave channel. The corresponding states $N{$\Lambda${}}_{b}$, $N{$\Sigma${}}_{b}$ have similar properties as that of states $N{$\Lambda${}}_{c}$, $N{$\Sigma${}}_{c}$, and there exists a $N{$\Sigma${}}_{b}{(}^{3}{S}_{1})$ resonance state with energy of 6733\char21{}6743 MeV in the $N{$\Lambda${}}_{b}$ $D$-wave scattering phase shifts.

$d^{*}$ dibaryon study is a critical test of hadron interaction models. The electroproduction cross sections of $e\overrightarrow{d}{\mathrm{ed}}^{*}$ have been calculated based on the meson exchange current model. The cross section around 30 degrees of 1 GeV electron in the laboratory frame is about 10 nb, which is about two orders smaller than that of the quasielastic and Δ resonance production. A special kinematics and detector system must be studied to pin down the weak signal of $d^{*}$ resonance from the strong background.

Fe contamination has always been one of the most critical issues in the integrated circuit (IC) industry due to its catastrophic effect on device reliability and electrical characteristics. With complementary metal oxide semiconductor (CMOS) technology scaling down, this issue has been attracting more attention. In this paper, the impact of Fe impurity on the reliability of gate oxide integrity (GOI) in advanced CMOS technology is investigated. Intentional contamination of polysilicon gates was conducted in both boron- and phosphorus-doped devices. Failure analysis of the gate oxide was conducted with high-resolution transmission electron microscopy (HRTEM) and the energy dispersive X-ray (EDX) technique. The experimental results disclose that the properties of PMOS are much more sensitive to Fe contamination than those of NMOS. It is suggested that the reason for the above phenomena is that Fe precipitates at the PMOS gate/oxide interface but dissolves uniformly in the NMOS poly gate due to lower formation energy of the FeB pair (0.65 eV) in PMOS than that of the P4-Fe cluster (3.2 eV) in NMOS.

Ordered nanostructured magnetic networks offer a versatile platform for studying magnetic frustration, reconfigurable magnonics, and neuromorphic computing. Their fabrication, however, often relies on complicated and expensive nanolithography. Here, we demonstrate an electrochemical strategy for growing large-area magnetic networks composed of self-organized triangular motifs separated by periodic parallel ridges. The ridges arise deterministically from voltage-controlled electrodeposition, while the regions between them undergo self-organization: cobalt nucleates, bifurcates, and assembles into either solid or hollow triangular units depending on the growth conditions. The global network morphology is dictated by the waveform of the applied voltage. These triangular structures host diverse magnetic states, including vortex-like and macro-spin-like configurations, and exhibit nonlinear responses to external magnetic fields. Our approach combines macroscopically controlled, deterministic growth and microscopic self-organization, providing a scalable pathway for fabricating complex nanostructures. The resulting magnetic networks show potential as physical reservoirs for neuromorphic computing.