Efficient management through monitoring of Li-ion batteries is critical to the progress of electro-mobility and energy storage globally, since the technology can be hazardous if pushed beyond its safety boundaries. Battery management systems (BMSs) are being actively improved to reduce size, weight, and cost while increasing their capabilities. Using power line communication, wireless monitoring, or hybrid data links are one of the most advanced research directions today. In this work, we propose the use of radio frequency (RF) transceivers as a communication unit that can deliver both wired and wireless services, through their superior analog and digital signal processing capability compared to PLC technology. To validate our approach computational simulation and empirical evaluation was conducted to examine the possibility of using RF transceivers on a direct current (DC) bus for wired BMS. A key advantage of this study is that it proposes a flexible and tested system for communication across a variety of network scenarios, where wireless data links over disrupted connections may be enabled by using this technology in short-range wired modes. This investigation demonstrates that the IEEE 802.15.4-compliant transceivers with operating frequencies of 868 MHz and 2.4 GHz can establish stable data links on a DC bus via capacitive coupling at high data rates.

This paper presents a methodology to model GaN power HEMT switching transients. Thus, a compact model to predict devices' pulse switching characteristics and current collapse reliability issue has been developed. Parasitic RC subcircuits and a standard double-pulse switching tester to model intrinsic parasitic effects and to analyze power dissipation of GaN power HEMT are proposed and presented. Switching transient including gate-lag and drain-lag is predicted for ideal (without trap) and nonideal (with trap) devices. The results are validated by and compared to 2-D finite-element technology computer-aided design simulations. The original aim of this exercise is to develop a fast (near-real-time) model which can predict dynamic behavior of single and multiple power GaN HEMTs used for the switching transients of GaN power devices at circuit level.

This letter presents first-ever fabricated GaN split-current magnetic sensor device. Device operation and key manufacturing steps are also presented. The measured relative current sensitivity is constant at 14 % T ^-1 for wide mT range of the magnetic field. Constant sensitivity of a fabricated sensor can be attributed to device's 2DEG nature, i.e., its high electron concentration and mobility, and very small layer thickness.

A 2D drift-diffusion model with Schrodinger-Poisson quantum corrections using ATLAS toolbox by Silvaco is calibrated against experimental I _D -V _GS characteristics of the 1 μm gate length GaN-based high electron mobility transistor (HEMT). The model takes into account both piezoelectric and spontaneous polarization effects at the all interfaces of GaN/Al _0.25 Ga _0.75 N/AlN/GaN structure. This unintentionally doped hetero-structure transistor has i) an enhanced carrier mobility due to the decrease in alloy-disorder and impurity scatterings; ii) an increased carrier sheet density in 2DEG due to a better confinement in the channel thanks to AlN spacer. These improvements considerably enhance the output power and performance of the GaN HEMTs. We found that surface traps play an essential role in the creation of 2DHG which can affect a carrier density in 2DEG.