In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

Artificial synapse having good linearity is crucial to achieve an efficient learning process in neuromorphic computing. It is found that the synaptic linearity can be enhanced by engineering the doping region across the switching layer. The nonlinearity of potentiation and depression of the pure device is 36% and 91%, respectively; meanwhile, the nonlinearity after doping can be suppressed to be 22% (potentiation) and 60% (depression). Henceforth, the learning accuracy of the doped device is 91% with only 13 iterations; meanwhile, the pure device is 78%. A detailed conduction mechanism to understand this phenomenon is proposed.

The resistive switching characteristics of indium tin oxide (ITO)/Zn_1−xCo_xO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.

To date, the search for creating stable ferrofluids with excellent properties for biomedical application is one of the challenging scientific and practical investigations. In this study, novel Fe3O4/Ag nanohybrid ferrofluids from iron sand were synthesized using a double-layer method. The Fe3O4/Ag nanocomposites exhibited stable crystallite sizes of 11.8 12.1 nm and 36.8–37.2 nm for Fe3O4 and Ag, respectively. The lattice parameters of the spinel structure Fe3O4 and face-centered cubic Ag were respectively 8.344 Å and 4.091 Å. With increasing Ag amount, the crystallite phase of Ag in the nanocomposites increased from 40.2% to 77.2%. The XPS results confirmed that Fe3O4/Ag nanocomposites were successfully prepared, where Fe3O4 mixed well with Ag via strong ionic bonding. The FTIR results confirmed the presence of Fe3O4/Ag, oleic acid, and dimethyl sulfoxide as the filler, first layer, and second layer, respectively. The as-prepared ferrofluids exhibited superparamagnetic behavior, where the saturation magnetization decreased with increasing Ag content. The Fe3O4/Ag nanohybrid ferrofluids exhibited excellent antimicrobial performance against Bacillus subtilis, Staphylococcus aureus, Escherichia coli, and Candida albicans. More importantly, the Fe3O4/Ag nanohybrid ferrofluids decreased the progression of liver fibrosis-related inflammation and fibrogenic activity on hepatic stellate cells.

The synaptic plasticity of indium tin oxide (ITO)/ZnO/ITO highly transparent (more than 88%) analog switching resistive memory device is investigated. Highly stable analog switching behavior for more than 2500 cycles with a good memory window of approximately two orders makes it suitable for synapse application. The synaptic response is investigated by applying identical electrical pulses. The potentiation and depression of the device used the conventional identical single-pulse scheme to perform high nonlinearity (0.83) and decaying training epochs. However, the linearity and the training epochs are improved to 0.44 by implementing the identical double-pulse scheme. The proposed double-pulse scheme offers a broad dynamic range (200) having 320 conductance states. This invisible structure and double-pulse scheme can be highly suitable for the neuromorphic computing devices.