Helium bubble nucleation at low-angle twist boundaries in gold has been investigated. It is found that the helium bubbles preferentially nucleate at screw dislocation nodal points and result in helium bubble superlattice formation, which is completely isomorphic with the screw dislocation network along the twist-grain boundary. Molecular statics calculations reveal that defect formation/solution energies along the screw dislocations, especially at the nodal points, are lower than their bulk counterparts. It is believed that this driving force is responsible for the helium bubble superlattice formation. Our study suggests that grain boundary engineering via adjustable twist angles in parallel boundaries to form tunable 3D bubble superlattices could afford a very promising approach for design of radiation tolerant materials.

The plasma-enhanced chemical vapor (PECVD) co-deposition of pyridine and 1,2 dicarbadodecaborane, 1,2-B ₁₀ C ₂ H ₁₂ (orthocarborane) results in semiconducting boron carbide composite films with a significantly better charge extraction than plasma-enhanced chemical vapor deposited semiconducting boron carbide synthesized from orthocarborane alone. The PECVD pyridine/orthocarborane based semiconducting boron carbide composites, with pyridine/orthocarborane ratios ~3:1 or 9:1 exhibit indirect band gaps of 1.8 eV or 1.6 eV, respectively. These energies are less than the corresponding exciton energies of 2.0 eV–2.1 eV. The capacitance/voltage and current/voltage measurements indicate the hole carrier lifetimes for PECVD pyridine/orthocarborane based semiconducting boron carbide composites (3:1) films of ~350 µ s compared to values of ⩽35 µ s for the PECVD semiconducting boron carbide films fabricated without pyridine. The hole carrier lifetime values are significantly longer than the initial exciton decay times in the region of ~0.05 ns and 0.27 ns for PECVD semiconducting boron carbide films with and without pyridine, respectively, as suggested by the time-resolved photoluminescence. These data indicate enhanced electron–hole separation and charge carrier lifetimes in PECVD pyridine/orthocarborane based semiconducting boron carbide and are consistent with the results of zero bias neutron voltaic measurements indicating significantly enhanced charge collection efficiency.