Tin perovskite is rising as a promising candidate to address the toxicity and theoretical efficiency limitation of lead perovskite. However, the voltage and efficiency of tin perovskite solar cells are much lower than lead counterparts. Herein, indene-C₆₀ bisadduct with higher energy level is utilized as an electron transporting material for tin perovskite solar cells. It suppresses carrier concentration increase caused by remote doping, which significantly reduces interface carriers recombination. Moreover, indene-C₆₀ bisadduct increases the maximum attainable photovoltage of the device. As a result, the use of indene-C₆₀ bisadduct brings unprecedentedly high voltage of 0.94 V, which is over 50% higher than that of 0.6 V for device based on [6,6]-phenyl-C61-butyric acid methyl ester. The device shows a record power conversion efficiency of 12.4% reproduced in an accredited independent photovoltaic testing lab.

The Dion-Jacobson quasi-2D structure improves the stability of perovskite light-emitting diodes.

Halide perovskites are rising as promising luminescent materials for display applications for their sharp emission peaks and high luminescence quantum yield. However, the heavy metal character of lead is one concern that shadows its application. In this work, monolayer Ruddlesden–Popper 2D structural tin perovskite (PEA) ₂ SnI ₄ (PEA = C ₈ H ₉ NH ₃ ⁺ ) is explored for a pure red color light emitting diode (LED). The manipulation of crystal growth kinetics enables the formation of highly ordered nanoplates, bringing high luminescence yield approaching 10% with an emission peak at 630 nm. Meanwhile, the highly oriented and ordered nanoplates structure allows effective carrier injection. The LED shows a low turn on voltage of 2.2 V, an external quantum efficiency of 0.52% and a max luminance of 355 cd m ⁻² . The luminescence quantum yield is comparable to the best performing device based on lead perovskites in the pure red emission region. This work provides a strategy to explore 2D structures for efficient macroscale LEDs.

This study demonstrates a metal-semiconductor-metal (MSM) type photodetector based on 50 nm amorphous Ga ₂ O ₃ film using the atomic layer deposition (ALD) technique that can provides effective detections at both solar-blind and X-ray lights. The detector exhibits stable performances at high temperature (150 °C) in the air, characterized by a low dark current (< 0.1 nA), high photo-to-dark current ratio (> 10 ⁵ ), and fast responses (rising/decaying times of 0.53/0.13 s), respectively. Meanwhile, the detector shows the high sensitivity (952 μC Gy _air ^-1 cm ^-2 ) and ultra-low detection limit (< 11.23 nGy _air s ^-1 ) in X-ray detection, which is among the highest values reported in Ga ₂ O ₃ thin film photodevices to the best of authors’ knowledge. The superior capabilities can be ascribed to the restricted oxygen vacancies during the ALD process. These results indicate that the Ga ₂ O ₃ -based detector has great potential for applications in security system and irradiation exploration in harsh environments.