We report on measurements of step-step interaction on a flat $\text{Si}\left(111\right)\text{−}\left(7\times 7\right)$ surface and on vicinal Si(001) surfaces with miscut angles ranging between $0.2°$ and $8°$. Starting from scanning tunneling microscopy images of these surfaces and describing steps profile and interactions by the continuum step model, we measured the self-correlation function of single steps and the distribution of terrace widths. Empirical parameters, such as step stiffness and step-step interaction strength, were evaluated from the images. The present experiment allows to assess the dependence of the step-step repulsion on miscut angle, showing how parameters drawn from tunneling images can be used to interpolate between continuum mesoscopic models and atomistic calculations of vicinal surfaces.

We present a novel approach to engineer the growth of strained epitaxial films based on tailoring the elastic-interaction potential between nanostructures with substrate vicinality. By modeling the island-island interaction energy surface within continuum elasticity theory, we find that its fourfold symmetry is broken at high miscuts, producing directions of reduced elastic-interaction energy. As a consequence, it is possible to direct the Ge island growth on highly misoriented Si(001) substrates towards desired pathways.

Many manifestations of natural processes give rise to interesting morphologies; it is all too easy to cite the corrugation of the Earth's surface or of planets in general. However, limiting ourselves to 2D cases, the morphology to which crystal growth gives rise is also intriguing. In particular, it is interesting to study some characteristics of the cluster projection in 2D, namely the study of the shapes of the speckles (fractal dimension of their rims) or the distribution of their areas. Recently, for instance, it has been shown that the size cumulative distribution function (cdf) of “voids” in a corrole film on Au(111) is well described by the well known Weibull distribution. The present article focuses on the cdf of cluster areas generated by numerical simulations: the clumps (clusters) are generated by overlapping grains (disks) whose germs (disk centers) are chosen randomly in a $2000\times 2000$ square lattice. The obtained cdf of their areas is excellently fitted to the Weibull function in a given range of surface coverage. The same type of analysis is also performed for a fixed-time clump distribution in the case of Kolmogorov-Johnson-Mehl-Avrami (KJMA) kinetics. Again, a very good agreement with the Weibull function is obtained.

We outline a metal-free fabrication route of in-plane Ge nanowires on Ge(001) substrates. By positively exploiting the polishing-induced defects of standard-quality commercial Ge(001) wafers, micrometer-length wires are grown by physical vapor deposition in ultra-high-vacuum environment. The shape of the wires can be tailored by the epitaxial strain induced by subsequent Si deposition, determining a progressive transformation of the wires in SiGe faceted quantum dots. This shape transition is described by finite element simulations of continuous elasticity and gives hints on the equilibrium shape of nanocrystals in the presence of tensile epitaxial strain.